Interfacial Charge and Its Effects on Mobility and Carrier Concentration for High-Purity GaInAs Grown by Metalorganic Chemical Vapor Deposition

Carrier concentration and mobility of undoped InGaAs layers grown on InP via organometallic vapor phase epitaxy have been investigated. The mobility limits imposed by various scattering mechanisms were studied over the temperature range 40 to 300 K. Electrons in InGaAs epilayers grown on semi-insulating InP substrates without any InP buffer layer had a lower 77 K mobility than others grown with an undoped InP buffer layer. This is attributed to a higher acceptor compensation in the unbuffered layers (as determined from temperature dependent carrier concentration data) and to significant ionized-impurity scattering in these more compensated samples.

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Investigation of near interface properties in semi-insulating InP substrates with epitaxial grown InGaAs and InAlAs by photoreflectance

Zhou

Dutta

Shen

et al. 1993

Journal of Applied Physics

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An extensive photoreflectance (PR) study has been done on a series of undoped and n-type, InGaAs and InAlAs molecular beam epitaxy (MBE) grown layers with different In mole fractions, and epilayer thicknesses on Fe-doped semi-insulating (SI)-InP substrates. Three substrate features were observed in the spectra. From investigations of the temperature dependence, time constant dependence, and an additional cw light beam intensity dependence, they were identified as an excitonic transition from the substrate, a free electron transition near the interface which gives a Franz-Keldysh oscillation, and a transition from the spin-orbit split-off valence band. The Franz-Keldysh effect indicates that a temperature dependent built-in electric field is formed near the interface. The dependence of the field on doping concentration, strain, or epilayer composition (band gap) was insignificant. The PR signal from a SI-InP wafer after a pre-MBE-growth heating was found to be strongly enhanced over that from an untreated wafer. This signal was even more enhanced after an epilayer was grown on top, indicating the formation of a built-in field. These results are indicative of a redistribution of charge near the interface/surface in the process of MBE growth; the associated PR signal (phase) could be used for in situ monitoring of epilayer growth on SI-InP wafers.1266

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Interfacial Charge and Its Effects on Mobility and Carrier Concentration for High-Purity GaInAs Grown by Metalorganic Chemical Vapor Deposition

Cited by 4 publications

References 17 publications

Indium Triorganyls

Indium Triorganyls

The effect of InP buffer layer on the electron transport properties of epitaxial In1−xGaxAs

Investigation of near interface properties in semi-insulating InP substrates with epitaxial grown InGaAs and InAlAs by photoreflectance

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