In this paper we investigate the physical and electrical properties of silicon layers grown by molecular beam epitaxy on 4H-SiC substrates, evaluating the effect of the Si doping, Si temperature deposition, and SiC surface cleaning procedure. Si∕SiC monolithic integration of Si circuits with SiC power devices can be considered as an attractive proposition and has the potential to be applied to a broad range of applications. X-ray diffraction and scanning electron microscopy are used to determine the Si crystal structure (cubic silicon) and morphology. I-V and C-V measurements are performed to evaluate the rectifying diode characteristics along with the Si∕SiC built-in potential and energy band offsets. In the last section, we propose that our Si∕SiC heteojunction diode current characteristics can be explained by an isojunction drift-diffusion and thermoionic emission model where the effect of doping concentration of the silicon layer and its conduction band offset with SiC is analyzed.

This paper describes the thermal oxidation of Si/SiC heterojunction structures, produced using a layer-transfer process, as an alternative solution to fabricating SiC metal-oxide-semiconductor ͑MOS͒ devices with lower interface state densities ͑D it ͒. Physical characterization demonstrate that the transferred Si layer is relatively smooth, uniform, and essentially monocrystalline. The Si on SiC has been totally or partially thermally oxidized at 900-1150°C. D it for both partially and completely oxidized silicon layers on SiC were significantly lower than D it values for MOS capacitors fabricated via conventional thermal oxidation of SiC. The quality of the SiO 2 , formed by oxidation of a wafer-bonded silicon layer reported here has the potential to realize a number of innovative heterojunction concepts and devices, including the fabrication of high quality and reliable SiO 2 gate oxides.

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