A critical analysis of the existing boundary conditions at the Schottky contact is described. It is supported by the results of simulation and comparison with experimental observations. 1-V measurements on the CrSi,-Si Schottky structure were carried out to investigate the contribution of tunneling current to the total current. It is found that at room temperature this effect can be neglected. Boundary conditions based on a revised current flow theory through the Schottky junction seems to be the best choice for modeling and simulation of electrical characteristics of Schottky diode and MESFET gate structure. Using them good agreement between simulated and experimental 1-V characteristics was obtained. The significant conclusion of this work is that the contribution of hole current density through the reverse biased Schottky junction cannot be neglected.
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