Analysis of I–V measurements on PtSi-Si Schottky structures in a wide temperature range

Donoval, D.; Barus, M.; Zdimal, M.

doi:10.1016/0038-1101(91)90031-s

Cited by 160 publications

(76 citation statements)

References 5 publications

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“…Thus, the current flowing through the Schottky contact increases. 31 This also results in decreased R ON and R s values. We analyze the experimental forward IV curves via TE theory.…”

confidence: 99%

Characterization of the inhomogeneous barrier distribution in a Pt/(100)β-Ga2O3 Schottky diode via its temperature-dependent electrical properties

Jian

et al. 2018

AIP Advances

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β-Ga2O3 is an ultra-wide bandgap semiconductor with applications in power electronic devices. Revealing the transport characteristics of β-Ga2O3 devices at various temperatures is important for improving device performance and reliability. In this study, we fabricated a Pt/β-Ga2O3 Schottky barrier diode with good performance characteristics, such as a low ON-resistance, high forward current, and a large rectification ratio. Its temperature-dependent current–voltage and capacitance–voltage characteristics were measured at various temperatures. The characteristic diode parameters were derived using thermionic emission theory. The ideality factor n was found to decrease from 2.57 to 1.16 while the zero-bias barrier height Φb0 increased from 0.47 V to 1.00 V when the temperature was increased from 125 K to 350 K. This was explained by the Gaussian distribution of barrier height inhomogeneity. The mean barrier height Φ¯b0 = 1.27 V and zero-bias standard deviation σ0 = 0.13 V were obtained. A modified Richardson plot gave a Richardson constant A* of 36.02 A·cm−2·K−2, which is close to the theoretical value of 41.11 A·cm−2·K−2. The differences between the barrier heights determined using the capacitance–voltage and current–voltage curves were also in line with the Gaussian distribution of barrier height inhomogeneity.

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“…Thus, the current flowing through the Schottky contact increases. 31 This also results in decreased R ON and R s values. We analyze the experimental forward IV curves via TE theory.…”

confidence: 99%

Characterization of the inhomogeneous barrier distribution in a Pt/(100)β-Ga2O3 Schottky diode via its temperature-dependent electrical properties

Jian

et al. 2018

AIP Advances

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“…The higher extracted barrier heights in the sputter etch devices correlate with the higher effective resistivity, but the ideality factor indicates that a simple thermionic emission model does not accurately represent these devices; and with such high ideality factors, the extracted barrier height is not physically meaningful [33]. The low extracted…”

Section: Extraction Resultsmentioning

confidence: 92%

“…As other current mechanisms become significant, the ideality factor can also exceed n = 2, with values as high as n = 8.9 reported [32]; these high ideality factors are sometimes attributed to a native oxide layer on the electrode and an inhomogeneous barrier [32]. With an ideality higher than n ≈ 1.1, contributions from other sources are too significant to calculate I S for TE alone; the barrier height calculated from I S will then have no physical interpretation [33]. for p-CdTe [20].…”

Section: Current Versus Voltage Extraction Methodsmentioning

confidence: 99%

Measurement and Modeling of Blocking Contacts for Cadmium Telluride Gamma Ray Detectors

Beck

2010

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“…For an ideal Schottky junction, the electrical current due to the thermionic emission over the Schottky barrier is given by: 11,12 …”

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confidence: 99%

Improved characteristics for Au∕n-GaSb Schottky contacts through the use of a nonaqueous sulfide-based passivation

Liu

Saulys

Kuech

2004

Applied Physics Letters

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The influence of nonaqueous sulfide passivation (using Na 2 S in the inert solvent benzene) on Au/ n-GaSb Schottky junction behavior was studied. The junction parameters, Schottky barrier height and ideality factor, were derived and compared with those of as-received GaSb surfaces as well as surfaces treated with aqueous sulfide solutions. The Schottky junction made on as-received GaSb is highly nonideal, while S-based passivation treatment of the GaSb surface before contact formation improves the rectifying behavior, and markedly reduces the reverse current. A benzene-based nonaqueous sulfide treatment results in GaSb surfaces with lower oxide and elemental antimony content than does the aqueous sulfide treatment. The produced Schottky barrier height increases to 0.61 eV and the Au/ n-GaSb contact is close to an ideal Schottky junction. GaSb is an important III-V compound semiconductor for high-speed and optoelectronic devices operating in the infrared and near-infrared region. 1 Due to its small band gap, there is often difficulty in achieving a high-quality metalGaSb Schottky contact with near-ideal current-voltage ͑I -V͒ characteristics. Surface and interface properties are critical in determining metal-semiconductor contact behavior, and the existence of an interfacial layer, or a high density of defect states at the metal and semiconductor interface, can lead to highly nonideal characteristics. Air oxidation of GaSb at room temperature results in a thick overlayer of native oxide and a high concentration of elemental antimony at the oxideGaSb interface. [2][3][4] The presence of elemental Sb at the surface can lead to device degradation. Due to its metallic nature, Sb can increase the surface leakage current and lead to the generation of gap-region surface states, reducing the minority carrier lifetime and limiting device performance. Surface passivation using sulfide-based solutions can effectively remove the native oxide and improve the surface electronic and electrical properties. [5][6][7] Previous studies of the sulfurbased passivation using a ͑NH 4 ͒ 2 S-water solution have shown improved Schottky characteristics with a Au-GaSb barrier of 0.52-0.57 eV being reported. 8,9 The use of an aqueous process however, with and without S passivation, leads to a variety of results in the formation of a Au-GaSb Schottky diode with a wide range of the barrier height values being reported, even exceeding the band-gap energy. 10 Further improvements in the reproducibility and stability of the Au-GaSb diodes require a thorough removal of surface oxides and elemental Sb which entails a nonaqueous environment. Nonaqueous passivation using an inert solvent, such as benzene, as the sulfidization medium results in a GaSb surface with decreased amounts of oxide residue and elemental Sb content compared to that generated by aqueous sulfide treatment. 7 In this work, the impact of a nonaqueous S-based passivation treatment on the Au/ n-GaSb Schottky junction behavior was studied. In particular, a nonaqueous sulfide passivat...

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Analysis of I–V measurements on PtSi-Si Schottky structures in a wide temperature range

Cited by 160 publications

References 5 publications

Characterization of the inhomogeneous barrier distribution in a Pt/(100)β-Ga2O3 Schottky diode via its temperature-dependent electrical properties

Characterization of the inhomogeneous barrier distribution in a Pt/(100)β-Ga2O3 Schottky diode via its temperature-dependent electrical properties

Measurement and Modeling of Blocking Contacts for Cadmium Telluride Gamma Ray Detectors

Improved characteristics for Au∕n-GaSb Schottky contacts through the use of a nonaqueous sulfide-based passivation

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