Critical analysis of the schottky boundary condition for numerical simulation of Schottky and MESFET structure

Abstract

A critical analysis of the existing boundary conditions at the Schottky contact is described. It is supported by the results of simulation and comparison with experimental observations. 1-V measurements on the CrSi,-Si Schottky structure were carried out to investigate the contribution of tunneling current to the total current. It is found that at room temperature this effect can be neglected. Boundary conditions based on a revised current flow theory through the Schottky junction seems to be the best choice for modeling and simulation of electrical characteristics of Schottky diode and MESFET gate structure. Using them good agreement between simulated and experimental 1-V characteristics was obtained. The significant conclusion of this work is that the contribution of hole current density through the reverse biased Schottky junction cannot be neglected.

Simultaneously Solving the Photovoltage and Photocurrent at Semiconductor–Liquid Interfaces

“…Thus, we begin our analysis by briefly demonstrating that our methodology can capture the majority and minority carrier electrostatics of MS junctions, by numerically solving the complete drift–diffusion equations utilizing the boundary conditions derived in section . The primary goal of this analysis is to verify that the implementation procedure discussed in our present work can capture the electrostatics and carrier transport of an MS Schottky junctionwhich has been well explored in the device physics literature. − , Particular attention will be given to modeling the transport of minority carriers due to its importance in photocatalytic semiconductor–liquid junctions, which is the ultimate goal of our present work.…”

“…Thus, we have demonstrated that our approach captures the necessary minority carrier physics, an important prelude to evaluating SL pseudo-Schottky contacts which are dominated by minority carrier transport. Finally, the calculated current density (as shown in Figure e) exhibits the rectifying character of a typical Schottky contact and can be compared with numerous current–voltage characteristics present in the device physics literature. − , …”

“…The primary goal of this analysis is to verify that the implementation procedure discussed in our present work can capture the electrostatics and carrier transport of an MS Schottky junctionwhich has been well explored in the device physics literature. [43][44][45][46]60 Particular attention will be given to modeling the transport of minority carriers due to its importance in photocatalytic semiconductor−liquid junctions, which is the ultimate goal of our present work.…”

“…Finally, the calculated current density (as shown in Figure 4e) exhibits the rectifying character of a typical Schottky contact and can be compared with numerous current−voltage characteristics present in the device physics literature. [43][44][45][46]60 3.2. Modeling a Semiconductor−Liquid Pseudo-Schottky Junction.…”

“…In this work, we have presented a general theoretical and numerical method for simultaneously calculating the photovoltage and photocurrent at semiconductor–liquid junctions. The method was developed by building upon Schottky junction modeling techniques within the device physics literature utilizing the concept of an effective recombination velocity. − , The recombination velocity concept was extended to capture both charge transfer and recombination physics present at semiconductor–liquid interfaces and applied to the pseudo-Schottky junction formed by an anodic water-splitting semiconductor. This approach was implemented through the introduction of Neumann boundary conditions within the electron and hole continuity equations at the semiconductor–liquid interface.…”