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The main aim of this work was developing a novel technology for producing platforms for surface enhanced Raman scattering (SERS) measurements on photoetched (nanostructured) GaN with Au−Cu thin film as surface plasmonic layer. Dealloying of deposited Au−Cu films gives very stable and SERS-active platforms. Influence of percentage of copper in the alloyed Au−Cu layer on the SERS enhancement factor (EF SERS ) was examined. SERS measurements were performed using pyridine and 4mercaptobenzoic acid. Corresponding GaN platforms covered with Au and Au−Ag layers were used as a reference. It was also shown that the formation of even relatively large (above 1 μm) and very regular etch pits on the GaN surface may significantly increase the SERS enhancement factor.

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