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Films of Sb : SnO2 have been formed by vacuum e-beam evaporation. The structural, electrical, and optical properties of these films have been investigated with respect to annealing time and temperature. After heat treatment in an oxygen atmosphere, thin films with a peak transmittance of 98% and 4–9 × 10−3 Ωcm resistivity have been obtained. The barrier heights and energy band diagrams of Sb : SnO2/Si n-n and p-n heterojunctions have been determined by C-V measurements.

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Effects of NH3 nitridation on the chemical and electrical properties of N2O oxides have been studied. Compared with NH3-nitrided SiO2, NH3 nitridation does not degrade the electrical properties of N2O oxides, thus resulting in superior impurity diffusion barrier properties, while preserving excellent interface immunity to hot-carrier injection and much lower charge trapping. Correlation studies between the chemical and electrical properties of NH3-nitrided N2O and NH3-nitrided SiO2 have been done to explain these results.

The chemical structure and composition of ultrathin N2O oxides have been investigated using angle resolved x-ray photoelectron spectroscopy and compared to those of reoxidized NH3-nitrided SiO2. It is found that N2O oxide shows a second nitrogen-related bond (N—O bonds) in close proximity to the SiO2/Si interface in addition to the typically observed Si—N bonds in reoxidized NH3-nitrided SiO2. In addition, the change of the difference between Si 2p and O 1s binding energies in the N2O oxide and reoxidized NH3-nitrided SiO2 with the take-off angle is negligible due to the interfacial nitrogen incorporation.