Electrical and optical characterization of Sb : SnO<sub>2</sub>

He, Yue-Song; Campbell, Joe C.; Murphy, Robert Cushman; Arendt, M.; Swinnea, J. S.

doi:10.1557/jmr.1993.3131

Cited by 208 publications

(96 citation statements)

References 9 publications

Supporting

Mentioning

Contrasting

Unclassified

Order By: Relevance

“…Henceforth, we will refer to those levels as bulk shallow levels. According to electro-physical study data, ionized oxygen vacancies in tin dioxide form shallow donor levels with an energy of ~0.03 and ~0.15eV below the bottom of the CBM [9,10,11]. In electron spin resonance measurements, other authors have observed the existence of donor levels from ~0.15eV up to ~0.30eV underneath the CBM [12].…”

Section: -Results and Discussionmentioning

confidence: 99%

Defect study of SnO2 nanostructures by cathodoluminescence analysis: Application to nanowires

Prades

Arbiol

Cirera

et al. 2007

Sensors and Actuators B: Chemical

View full text Add to dashboard Cite

Abstract:Defects in SnO 2 nanowires have been studied by cathodoluminescence, and the obtained spectra have been compared with those measured on SnO 2 nanocrystals of different sizes in order to reveal information about point defects not determined by other characterization techniques. Dependence of the luminescence bands on the thermal treatment temperatures and pre-treatment conditions have been determined pointing out their possible relation, due to the used treatment conditions, with the oxygen vacancy concentration. To explain these cathodoluminescence spectra and their behavior, a model based on first-principles calculations of the surface oxygen vacancies in the different crystallographic directions is proposed for corroborating the existence of surface state bands localized at energy values compatible with the found cathodoluminescence bands and with the gas sensing mechanisms. CL bands centered at 1.90 eV and 2.20 eV are attributed to the surface oxygen vacancies 100º coordinated with tin atoms whereas CL bands centered at 2.37 eV and 2.75 eV are related to the surface oxygen vacancies 130º coordinated. This combined process of cathodoluminescence and ab initio calculations is shown to be a powerful tool for nanowire defect analysis. Key words:SnO 2 , CATHODOLUMINESCENCE, NANOSTRUCTURE, NANOWIRE, OXYGEN VACANCY, AB INITIO Manuscript 2 1.-Introduction:Tin dioxide (SnO 2 ) plays a key role in solid state gas sensors [1]. So a lot of experimental work has been done in order to characterize SnO 2 not only from the technological point of view as a sensor of different gases [2] but also from the materials science standpoint [3] so as to achieve improved performances by means of a better knowledge of the synthesized materials. The vacancy defects investigation deserves special attention as they have been clearly related to conductive and sensing properties of metal oxides [2]. This article will deal with the analysis of point defects using cathodoluminescence (CL) spectra of nanostructured SnO 2 , as this technique reveals complementary information about radiative transitions related to these point defects that is not determined by other characterization techniques This experimental procedure is not new. Since the mid-1970s, however, few works have been published presenting the CL spectra of SnO 2 with different morphologies [4,5,6,7]. In all known cases, several bands between 1.9 and 2.6eV have been reported but there still remains some uncertainty on their origin [6]. However, there are no systematic and detailed works considering nanowires and their comparison with nanoparticles of different sizes.On the other hand, first-principles methodologies based on the density functional theory (DFT) now provide precise calculations of the energetic properties of bulk materials and their surfaces in moderate computing times [8]. Consequently, it is attractive to link theoretical findings with unclearly interpreted experimental results in order to attain better materials knowledge with a straightforward technological ...

show abstract

Section: -Results and Discussionmentioning

confidence: 99%

Defect study of SnO2 nanostructures by cathodoluminescence analysis: Application to nanowires

Prades

Arbiol

Cirera

et al. 2007

Sensors and Actuators B: Chemical

View full text Add to dashboard Cite

show abstract

“…2,3 In addition, it has potential applications in detecting polluted or toxic gases and other species, [4][5][6] as well as successful use in optoelectronic devices. [7][8][9][10][11][12][13] Oxygen gas monitoring is an important issue in various fields, such as the environment, transportation, medicine, and agriculture. 14,15 Metal oxide semiconductor gas sensors offer an inexpensive and simple method for monitoring gases, due to low cost, small size, and real-time detection.…”

Section: Introductionmentioning

confidence: 99%

Microwave-assisted synthesis of SnO2 nanorods for oxygen gas sensing at room temperature

Azam¹,

Habib²,

Salah³

2013

IJN

View full text Add to dashboard Cite

“…On the other hand, tin oxide (SnO 2 ) is an n-type semiconductor with a wide band gap (E g = 3.6 eV at 300 K). It is well known for its potential applications in gas sensors [7], transparent conducting electrodes [8], transistors [9], and solar cells [10].…”

Section: Introductionmentioning

confidence: 99%

Fabrication and Raman Studies οf MgO/SnO₂Core-Shell Heteronanowires

Kim

2009

Acta Phys. Pol. A

View full text Add to dashboard Cite

We have reported the fabrication of MgO core/SnO 2 shell nanowires, by a two-step evaporation process. Thermal annealing induced changes in morphology, in which the nanowire surface became rough by the agglomeration of SnO 2 shell layers and its crystallinity was enhanced. It was found that three fundamental modes (475, 634, 772 cm −1 ) and an infrared (IR)-active mode (682 cm −1 ) of rutile SnO 2 appeared in the Raman spectrum of MgO core/SnO 2 shell nanowires. By thermal annealing, the relative intensity of the A 2u to the A 1g line was reduced, presumably due to the disorder or size effects.

show abstract

Electrical and optical characterization of Sb : SnO₂

Cited by 208 publications

References 9 publications

Defect study of SnO2 nanostructures by cathodoluminescence analysis: Application to nanowires

Defect study of SnO2 nanostructures by cathodoluminescence analysis: Application to nanowires

Microwave-assisted synthesis of SnO2 nanorods for oxygen gas sensing at room temperature

Fabrication and Raman Studies οf MgO/SnO₂Core-Shell Heteronanowires

Contact Info

Product

Resources

About

Electrical and optical characterization of Sb : SnO2

Cited by 208 publications

References 9 publications

Defect study of SnO2 nanostructures by cathodoluminescence analysis: Application to nanowires

Defect study of SnO2 nanostructures by cathodoluminescence analysis: Application to nanowires

Microwave-assisted synthesis of SnO2 nanorods for oxygen gas sensing at room temperature

Fabrication and Raman Studies οf MgO/SnO2Core-Shell Heteronanowires

Contact Info

Product

Resources

About

Electrical and optical characterization of Sb : SnO₂

Fabrication and Raman Studies οf MgO/SnO₂Core-Shell Heteronanowires