this paper presents 2D numerical simulation results allowing to define the sensitive volume and triggering criteria of SEB for VDMOS of classic planar-type technology. The results analysis permits besides to better understand the SEB mechanism.
This paper presents a validation of the methodology based upon backside laser irradiations to characterize the sensitivity of power devices towards SingleEvent Burnout. This is done thanks to high-energy heavy ion testing and device simulations.Index Terms -commercial power MOSFETs, SED, laser tests, heavy ion tests, software sim ulations.
The Structural Health Monitoring of bridge structures is becoming increasingly important. Due to
new developments in the field of sensor and data processing technology, a new method will be
introduced, which enables prognosis of the bridge lifespan through system identification based on
the monitoring process. Therefore, the damages of the bridge, which are modelled in an appropriate
damage model, will be linked with its BIM Model. The damage data will then be variated by using a
separate Variation Model. Using this method results in the automatized creation of numerous input
models for mass simulation. This forms the basis for a multi‐stage procedure, which identifies the
structural bridge state by using the simulation results for a numerical best‐fit method. Thereby
engineers can utilize the evaluated models to make more precise decisions and improve the
Structural Health Monitoring of bridge structures.
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