A uniform monolayer of alkanethiol-protected gold nanoparticle arrays with ultrahigh density have been used as microcontact-printable charge-trapping layers for the application in flexible flash memories. The new devices are compared to two reference devices with a floating gate created by thermal evaporation and electrostatic self-assembly, and show a large memory window, long retention times and good endurance properties.

Improved polyvinylpyrrolidone (PVP) microneedle arrays can be fabricated by adding cyclodextrin (CD) to form PVP–CD inclusion complexes.

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5Light-responsive memory in which the writing, reading and erasing processes are sensitive to light signal has its own niche for the civilian and military application. However, control of memory property with ultraviolet (UV) is difficult since the common charge trapping layer of flash memory is insensitive to UV light signal. Here, we reported a novel design of UV-manipulated photonic nonvolatile memory based on spin-coated close-packed CdSe/ZnS quantum dots (QDs) monolayer. Our devices display remarkable UVinduced detrapping behavior and UV-controlled persistent threshold voltage (V th ) shifts of programmed or erased states. The electrically 10 programmed flash memory has even been erased by a low intense UV light without additional external electric field within 1 s which is superior to the traditional silicon-based erasable programmable read only memory EPROM. With an advance in unique UV-detrapping effect of this novel structure, the UV-tunable complementary inverters constructed from p-channel and n-channel flash memory have further been demonstrated. The UV tunable charge trapping/detrapping facilitates the creation of new class of multifunctional optoelectronic memory devices.