CdSe/ZnS core–shell quantum dots charge trapping layer for flexible photonic memory

Han, Su‐Ting; Zhou, Ye; Zhou, Li; Yan, Yan; Huang, Long‐Biao; Wu, Wei; Roy, V. A. L.

doi:10.1039/c4tc01901f

Cited by 45 publications

(51 citation statements)

References 46 publications

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“…When an external bias is applied at the gate electrode, the charges can be trapped and an additional electric field is built to modulate the charge distribution, thus leading to the shift of transfer curve. When a reverse bias is applied at the gate electrode or a beam of light is illuminated on the device, the trapped charge carriers are released . This effect could make the device realize the storage function.…”

Section: Introductionmentioning

confidence: 99%

Charge‐Storage Aromatic Amino Compounds for Nonvolatile Organic Transistor Memory Devices

Zheng

Tong

et al. 2018

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Here, charge-storage nonvolatile organic field-effect transistor (OFET) memory devices based on interfacial self-assembled molecules are proposed. The functional molecules contain various aromatic amino moieties (N-phenyl-N-pyridyl amino- (PyPN), N-phenyl amino- (PN), and N,N-diphenyl amino- (DPN)) which are linked by a propyl chain to a triethoxysilyl anchor group and act as the interface modifiers and the charge-storage elements. The PyPN-containing pentacene-based memory device (denoted as PyPN device) presents the memory window of 48.43 V, while PN and DPN devices show the memory windows of 24.88 and 8.34 V, respectively. The memory characteristic of the PyPN device can remain stable along with 150 continuous write-read-erase-read cycles. The morphology analysis confirms that three interfacial layers show aggregation due to the N atomic self-catalysis and hydrogen bonding effects. The large aggregate-covered PyPN layer has the full contact area with the pentacene molecules, leading to the high memory performance. In addition, the energy level matching between PyPN molecules and pentacene creates the smallest tunneling barrier and facilitates the injection of the hole carriers from pentacene to the PyPN layer. The experimental memory characteristics are well in agreement with the computational calculation.

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Section: Introductionmentioning

confidence: 99%

Charge‐Storage Aromatic Amino Compounds for Nonvolatile Organic Transistor Memory Devices

Zheng

Tong

et al. 2018

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“…In that case, the light can be regarded as the fourth terminal compared with the conventional FET devices with source, drain and gate electrodes 29 30 31 . Furthermore, multi-level memory could be attained in photo-reactive memory by a combination of bias voltage and photo-irradiation 10 32 33 . Up to now, several sorts of memory devices containing photo-reactive component, either the semiconductor and dielectric, or the modification layer, have been fabricated and the performance has been improved with the assistance of light 28 34 .…”

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confidence: 99%

Photo-reactive charge trapping memory based on lanthanide complex

Zhuang

Zhou

et al. 2015

Sci Rep

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Traditional utilization of photo-induced excitons is popularly but restricted in the fields of photovoltaic devices as well as photodetectors, and efforts on broadening its function have always been attempted. However, rare reports are available on organic field effect transistor (OFET) memory employing photo-induced charges. Here, we demonstrate an OFET memory containing a novel organic lanthanide complex Eu(tta)3ppta (Eu(tta)3 = Europium(III) thenoyltrifluoroacetonate, ppta = 2-phenyl-4,6-bis(pyrazol-1-yl)-1,3,5-triazine), in which the photo-induced charges can be successfully trapped and detrapped. The luminescent complex emits intense red emission upon ultraviolet (UV) light excitation and serves as a trapping element of holes injected from the pentacene semiconductor layer. Memory window can be significantly enlarged by light-assisted programming and erasing procedures, during which the photo-induced excitons in the semiconductor layer are separated by voltage bias. The enhancement of memory window is attributed to the increasing number of photo-induced excitons by the UV light. The charges are stored in this luminescent complex for at least 104 s after withdrawing voltage bias. The present study on photo-assisted novel memory may motivate the research on a new type of light tunable charge trapping photo-reactive memory devices.

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“…With the P OPT increasing from 0 to 545.46 μW/cm 2 at V DD = 8.0 V, the VTC of the inverter shifts to negative input voltage (V IN ), the V TH of the inverter shifts from 3.78 to 2.86 V, and the voltage gain (|dV OUT /dV IN |) decreases from 144.73 to 49.73. In addition, in comparison to that the reported complementary photosensitive inverters with other active materials show the maximum voltage gain rate change of 108% [23]- [26], the inverter in this work shows an extremely high rate change of 194%. The high voltage gain rate change is mainly attributed to that both the p-type SnO and n-type IGZO phototransistors are with high photoresponsivities.…”

Section: Resultsmentioning

confidence: 49%

Imaging Array and Complementary Photosensitive Inverter Based on P-Type SnO Thin-Film Phototransistors

Yuan

Dai

Yan

et al. 2021

IEEE Electron Device Lett.

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P-type tin monoxide (SnO) thin-film phototransistors were developed with high photoresponsivity of 2.94 × 10 5 A/W and high detectivity of 1.82 × 10 14 Jones, and these values are, to the best of our knowledge, among the highest for the reported oxide-semiconductor-based phototransistors. The excellent performances of these phototransistors were further demonstrated by incorporating the devices into a 10×10 array to successfully image a letter "A" pattern. Furthermore, by integration of n-type indium gallium zinc oxide and p-type SnO thin-film phototransistors, we realized a complementary photosensitive inverter. The inverter exhibits excellent photoresponse with a high voltage gain rate change of 194%. Our results indicates that the SnO based phototransistors have great potential in thin-film photoelectronic circuits and systems. Index Terms-Tin monoxide (SnO), thin-film phototransistors, imaging array, indium gallium zinc oxide (InGaZnO or IGZO), complementary photosensitive inverter.

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CdSe/ZnS core–shell quantum dots charge trapping layer for flexible photonic memory

Cited by 45 publications

References 46 publications

Charge‐Storage Aromatic Amino Compounds for Nonvolatile Organic Transistor Memory Devices

Charge‐Storage Aromatic Amino Compounds for Nonvolatile Organic Transistor Memory Devices

Photo-reactive charge trapping memory based on lanthanide complex

Imaging Array and Complementary Photosensitive Inverter Based on P-Type SnO Thin-Film Phototransistors

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