Solution‐processed black phosphorus quantum‐dot‐based resistive random access memory is demonstrated with tunable characteristics, multilevel data storage, and ultrahigh ON/OFF ratio. Effects of the black phosphorous quantum dots layer thickness and the compliance current setting on resistive switching behavior are systematically studied. Our devices can yield a series of SET voltages and current levels, hence having the potential for practical applications in the flexible electronics industry.

Hexagonal nanosheet of Bi 2 Te 3 single crystals with uniform morphology were facilely synthesized through a high yield solvothermal route at low temperature (180 °C). Xray diffraction, scanning electron microscope, transmission electron microscope, selected area electron diffraction, and high-resolution transmission electron microscope were employed to characterize the products. In this solvothermal process, ethylene glycol (EG) was used as both reducing agent and solvent to simplify the process. The reaction temperature and alkaline environment play important roles in the formation of Bi 2 Te 3 single crystals, and the morphology of the products can be influenced by the added surfactants. Nanosheets with uniform morphology were obtained when polyvinyl pyrrolidone (PVP) was used as surfactant. Transport properties of hot pressed bulk samples formed by the as-prepared nanosheets were investigated. Thermal conductivity of the hot pressed nanosheets was greatly reduced by up to 60%, compared to the melt sample, with an enhancement of Seebeck coefficient and a decrease of electrical conductivity.

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A memristor and artificial synapse based on a ZnO–phosphorene nano-heterojunction are demonstrated. The continuous internal resistance states and multi-wavelength response of the memristor are applied to emulate the functions of the artificial synapse including PPF, SRDP, STDP and STP to LTP transition.

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We introduce a novel parallel-aligned liquid-crystal (LC) spatial light modulator (SLM) that has been designed to operate in a phase-only mode for wave-front correction. We measured and analyzed theoretically the electro-optic characteristics of the LC SLM and obtained a peak-to-valley value of 0.07049lambda(lambda= 0.6328microm) after correction. A Strehl ratio of 0.989 indicates the approximate upper limit of an aberrated wave front that the LC SLM can correct when it is used in an adaptive optical system.

For colloidal semiconductor nanocrystals (NCs), shape control and doping as two widely applied strategies are crucial for enhancing and manipulating their functional properties. Here we report a facile and green synthetic approach for high-quality colloidal Mn doped ZnO NCs with simultaneous control over composition, shape and optical properties. Specifically, the shape of doped ZnO NCs can be finely modulated from three dimensional (3D) tetrapods to 0D spherical nanoparticles in a single reaction scheme. The growth mechanism of doped ZnO NCs with interesting shape transition is explored. Furthermore, we demonstrate the tunable optical absorption features of Mn doped ZnO NCs by varying the Mn doping levels, and the enhanced photocatalytic performance of Mn doped ZnO NCs under visible light, which can be further optimized by delicately controlling their shapes and Mn doping concentrations. Our results provide an improved understanding of the growth mechanism of doped NCs during the growth process and can be potentially extended to ZnO NCs doped with other metal ions for various applications.

High-performance photonic nonvolatile memory combining photosensing and data storage with low power consumption ensures the energy efficiency of computer systems. This study first reports in situ derived phosphorene/ZnO hybrid heterojunction nanoparticles and their application in broadband-response photonic nonvolatile memory. The photonic nonvolatile memory consistently exhibits broadband response from ultraviolet (380 nm) to near infrared (785 nm), with controllable shifts of the SET voltage. The broadband resistive switching is attributed to the enhanced photon harvesting, a fast exciton separation, as well as the formation of an oxygen vacancy filament in the nano-heterojunction. In addition, the device exhibits an excellent stability under air exposure compared with reported pristine phosphorene-based nonvolatile memory. The superior antioxidation capacity is believed to originate from the fast transfer of lone-pair electrons of phosphorene. The unique assembly of phosphorene/ZnO nano-heterojunctions paves the way toward multifunctional broadband-response data-storage techniques.