Phosphorene nano-heterostructure based memristors with broadband response synaptic plasticity

Ren, Yi; Hu, Liang; Mao, Jing‐Yu; Yuan, Jun; Zeng, Yu‐Jia; Ruan, Shuangchen; Yang, Jiaqin; Zhou, Li; Zhou, Ye; Han, Su‐Ting

doi:10.1039/c8tc03089h

Cited by 66 publications

(64 citation statements)

References 52 publications

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“…By far, memristor, ferroelectric memory, phase‐change memory, resistive memory device, field‐effect transistor, as well as the silicon‐based complementary metal–oxide–semiconductor (CMOS) circuit have been vigorously studied for realization of an ideal synaptic unit. However, device‐level obstacles and barriers still exist.…”

Section: Introductionmentioning

confidence: 99%

Flexible Pyrene/Phenanthro[9,10‐d]imidazole‐Based Memristive Devices for Mimicking Synaptic Plasticity

Ren

Chang

Ting

et al. 2019

Advanced Intelligent Systems

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Emulation of memory and learning functionalities of biological synapses using a two-terminal electronic device with bidirectional progressive conductance modulation is an indispensable move toward the development of bio-inspired neuromorphic networks. Herein, a small molecule 1-phenyl-2-(4-(pyren-1-yl) phenyl)-1H-phenanthro[9,10-d]imidazole (pPPI) is synthesized, and an organic synaptic device is investigated with bipolar resistive switching characteristics and bidirectional gradual conductance regulation for the first time. A facile solution-processing approach can be used to deposit a uniform active layer on flexible substrates. Our pPPI-based nonvolatile memory presents a superior electrical performance, such as relatively stable and reproducible bipolar resistive switching phenomena and a robust data retention capability. In particular, our device displays a remarkably large switching window of around 7.0 Â 10 7 , which is a record ON/OFF ratio compared with other small molecule-based memories up to now. In addition, comprehensive cognitive functions of chemical synapses, for example, the excitatory postsynaptic current (EPSC), paired-pulse facilitation/depression (PPF/PPD), spike-rate-dependent plasticity (SRDP), and spike-time-dependent plasticity (STDP) are successfully achieved. Our achievement of a synaptic device based on small molecules may boost the development of bio-inspired neuromorphic systems using organic electronics.

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Section: Introductionmentioning

confidence: 99%

Flexible Pyrene/Phenanthro[9,10‐d]imidazole‐Based Memristive Devices for Mimicking Synaptic Plasticity

Ren

Chang

Ting

et al. 2019

Advanced Intelligent Systems

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“…Similar to other amorphous oxides, IGCO can also be used to prepare optoelectronic synaptic devices. Herein, photonic signals mimic external stimulation (presynaptic spikes), channel conductance imitates the change of synaptic weight, and I DS reflects postsynaptic current (PSC) after being stimulated (as shown in Figure a).…”

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confidence: 99%

Broadband Optoelectronic Synaptic Thin‐Film Transistors Based on Oxide Semiconductors

Duan

Javaid

Liang

et al. 2020

Physica Rapid Research Ltrs

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Optoelectronic synapse, well coupling the optical and electrical signals in one device, is an important building block in neuromorphic hardware library. Herein, optoelectronic synaptic devices are demonstrated based on a unique amorphous oxide semiconductor (InGaCdO [IGCO]) that can be spiked by broadband light signals from ultraviolet to near‐infrared region, approaching the wavelength of 1000 nm. These optically stimulated synaptic devices are based on the conventional bottom‐gate thin‐film transistor (TFT) configuration, providing the beneficial process/structural compatibility with the flat‐panel display industry. The IGCO TFTs, showing an ultrahigh field‐effect mobility up to 106 cm2 V−1 s−1, can well simulate a series of basic synaptic functionalities via changing the pulse intensity, number, and frequency. The device plasticity originates from the dynamic ionization and neutralization of oxygen vacancy‐related defects. Also, the mechanism underlying this dynamic process is discussed in detail, verifying that oxygen vacancy can turn to its ionized state by directly absorbing a photon having enough energy or with the aid of holes. The relatively higher carrier mobility, smaller bandgap, and larger activation energy of oxygen vacancy for the IGCO together facilitate the achievement of broadband optoelectronic synaptic devices.

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“…Light-induced programming or combinational schemes involving both light and electrical stimulation have been studied for different applications from switches 1 , 2 to neuromorphics 3 , 4 . Moreover, resistive switching has been demonstrated in various configurations; ethanol-adsorbed ZnO thin film upon visible light activation 5 , ultra-thin hafnium-oxide 6 , multiferroic thin film memristors 7 , ITO/oxide devices 8 , as well as in RRAM devices through combination of light and electrical stimuli using a thin SiO x layer sandwiched between a transparent top electrode and a p-type Si substrate 9 .…”

Section: Introductionmentioning

confidence: 99%

UV induced resistive switching in hybrid polymer metal oxide memristors

Stathopoulos

Tzouvadaki

Prodromakis

2020

Sci Rep

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There is an increasing interest for alternative ways to program memristive devices to arbitrary resistive levels. Among them, light-controlled programming approach, where optical input is used to improve or to promote the resistive switching, has drawn particular attention. Here, we present a straight-forward method to induce resistive switching to a memristive device, introducing a new version of a metal-oxide memristive architecture coupled with a UV-sensitive hybrid top electrode obtained through direct surface treatment with PEDOT:PSS of an established resistive random access memory platform. UV-illumination ultimately results to resistive switching, without involving any additional stimulation, and a relation between the switching magnitude and the applied wavelength is depicted. Overall, the system and method presented showcase a promising proof-of-concept for granting an exclusively light-triggered resistive switching to memristive devices irrespectively of the structure and materials comprising their main core, and, in perspective can be considered for functional integrations optical-induced sensing.

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Phosphorene nano-heterostructure based memristors with broadband response synaptic plasticity

Cited by 66 publications

References 52 publications

Flexible Pyrene/Phenanthro[9,10‐d]imidazole‐Based Memristive Devices for Mimicking Synaptic Plasticity

Flexible Pyrene/Phenanthro[9,10‐d]imidazole‐Based Memristive Devices for Mimicking Synaptic Plasticity

Broadband Optoelectronic Synaptic Thin‐Film Transistors Based on Oxide Semiconductors

UV induced resistive switching in hybrid polymer metal oxide memristors

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