No abstract

Studies of college students and citizens of south Florida, United States, students in Shanghai, China, and an international sample of social psychologists show that social influence, measured by the frequency of memorable interactions, is heavily determined by distance. In all three cases, although there was a great deal of interaction with distant persons, the relationship between distance and interaction frequency was well described by an inverse power function with a slope of approximately -1, consistent with the expectation that social impact is proportional to the inverse square of the distance separating two persons. This result confirms one principle from Latane's 1981 theory of social impact and helps explain the ability of opinion minorities to cluster and survive in the face of majority influence.

Joint communication and radar sensing (JCR) represents an emerging research field aiming to integrate the above two functionalities into a single system, by sharing the majority of hardware, signal processing modules and, in a typical case, the transmitted signal. The close cooperation of the communication and sensing functions can enable significant improvement of spectrum efficiency, reduction of device size, cost and power consumption, and improvement of performance of both functions. Advanced signal processing techniques are critical for making the integration efficient, from transmission signal design to receiver processing. This paper provides a comprehensive overview of the state-of-the-art on JCR systems from the signal processing perspective. A balanced coverage on both transmitter and receiver is provided for three types of JCR systems, namely, communicationcentric, radar-centric, and joint design and optimization.

As is known from visible-light experiments, silicon under femtosecond pulse irradiation can undergo so-called "nonthermal melting" if the density of electrons excited from the valence to the conduction band overcomes a certain critical value. Such ultrafast transition is induced by strong changes in the atomic potential energy surface, which trigger atomic relocation. However, heating of a material due to the electron-phonon coupling can also lead to a phase transition, called "thermal melting." This thermal melting can occur even if the excited-electron density is much too low to induce nonthermal effects. To study phase transitions, and in particular, the interplay of the thermal and nonthermal effects in silicon under a femtosecond x-ray irradiation, we propose their unified treatment by going beyond the Born-Oppenheimer approximation within our hybrid model based on tight-binding molecular dynamics. With our extended model we identify damage thresholds for various phase transitions in irradiated silicon. We show that electron-phonon coupling triggers the phase transition of solid silicon into a low-density liquid phase if the energy deposited into the sample is above ∼0.65 eV per atom. For the deposited doses of over ∼0.9 eV per atom, solid silicon undergoes a phase transition into high-density liquid phase triggered by an interplay between electron-phonon heating and nonthermal effects. These thresholds are much lower than those predicted with the Born-Oppenheimer approximation (∼2.1 eV/atom), and indicate a significant contribution of electron-phonon coupling to the relaxation of the laser-excited silicon. We expect that these results will stimulate dedicated experimental studies, unveiling in detail various paths of structural relaxation within laser-irradiated silicon.