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A two-dimensional (2D) dopant profiling technique is demonstrated in this work. We apply a unique cantilever probe in electrostatic force microscopy (EFM) modified by the attachment of a multiwalled carbon nanotube (MWNT). Furthermore, the tip apex of the MWNT was trimmed to the sharpness of a single-walled carbon nanotube (SWNT). This ultra-sharp MWNT tip helps us to resolve dopant features to within 10 nm in air, which approaches the resolution achieved by ultra-high vacuum scanning tunnelling microscopy (UHV STM). In this study, the CNT-probed EFM is used to profile 2D buried dopant distribution under a nano-scale device structure and shows the feasibility of device characterization for sub-45 nm complementary metal-oxide-semiconductor (CMOS) field-effect transistors.

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A technique for profiling doping fluctuation around source/drain regions on a sub-45-nm device is demonstrated. The mapping is achieved through the amplitude measurement of electrostatic force microscopy (EFM). A discovery was found that the EFM amplitude signal would reverse due to strong band bending at the doped semiconductor surface. We have illustrated this phenomenon to show its sensitive dependence on the local doping density. Combined with a tailored carbon nanotube modified cantilever, the EFM measurement operated near the critical bias voltage can resolve dopant features <10 nm along the effective channel length.