Two-dimensional (2D) hybrid perovskite sandwiched between two long-chain organic layers is an emerging class of low-cost semiconductor materials with unique optical properties and improved moisture stability. Unlike conventional semiconductors, ion migration in perovskite is a unique phenomenon possibly responsible for long carrier lifetime, current–voltage hysteresis, and low-frequency giant dielectric response. While there are many studies of ion migration in bulk hybrid perovskite, not much is known for its 2D counterparts, especially for ion migration induced by light excitation. Here, we construct an exfoliated 2D perovskite/carbon nanotube (CNT) heterostructure field effect transistor (FET), not only to demonstrate its potential in photomemory applications, but also to study the light induced ion migration mechanisms. We show that the FET I–V characteristic curve can be regulated by light and shows two opposite trends under different CNT oxygen doping conditions. Our temperature-dependent study indicates that the change in the I–V curve is probably caused by ion redistribution in the 2D hybrid perovskite. The first principle calculation shows the reduction of the migration barrier of I vacancy under light excitation. The device simulation shows that the increase of 2D hybrid perovskite dielectric constant (enabled by the increased ion migration) can change the I–V curve in the trends observed experimentally. Finally, the so synthesized FET shows the multilevel photomemory function. Our work shows that not only we could understand the unique ion migration behavior in 2D hybrid perovskite, it might also be used for many future memory function related applications not realizable in traditional semiconductors.
Travelling wave based protection is becoming attractive in ultra-high voltage (UHV) transmission systems due to the requirement for high-speed protection. However, the poor transfer characteristics of coupling capacitor voltage transform- ers (CCVTs) for high-frequency voltage have strictly limited its application. A novel travelling wave based protection scheme considering the characteristics of CCVTs and current transformers (CTs) is proposed in this paper. Dyadic wavelet transform (DWT) is used to extract the polarities of voltage and current travelling waves for fault direction identification. A prototype is further developed for practical application. Extensive laboratory tests are performed to assess the performance of the developed scheme. The prototype has been applied in the 750 kV substations in China and an external fault was recorded during the operation period, validating the effectiveness and reliability of the proposed protection principle.Index Terms-directional protection, power system protection, prototype implementation, travelling wave, UHV transmission line, ultra-high-speed protection, wavelet transform. 0885-8977 (c)
CuCeO catalysts prepared by a hydrothermal method with subsequent calcination are tested for the catalytic oxidation of CO. This synthesis method leads to a homogeneous dispersion of Cu2 O, CuO, and CeO2 in the catalysts. The composition of the catalysts is determined by the molar ratio of the metals, the hydrothermal process, and calcination temperature and influences the catalytic performance. The catalyst containing Cu2 O exhibits high catalytic activity with almost 100 % CO conversion at 105 °C and shows excellent stability with the conversion ratio not decreasing after four months of storage.
Owing to the combination of high carrier mobility and saturation velocity, low intrinsic capacitance, and excellent stability, the carbon nanotube (CNT) has been considered as a perfect semiconductor to construct radio frequency (RF) fieldeffect transistors (FETs) and circuits with an ultrahigh frequency band. However, the reported CNT RF FETs usually exhibited poor real performance indicated by the as-measured maximum oscillation frequency (f max ), and then the amplifiers, which are the most important and fundamental RF circuits, suffered from a low power gain and a low frequency band. In this work, we build RF transistors on solution-derived randomly orientated CNT films with improved quality and uniformity. The randomly orientated CNT film FETs exhibit the record as-measured maximum f max of 90 GHz, demonstrating the potential for over 28 GHz (at least one-third of 90 GHz) 5G mmWave (frequency range 2) applications. Benefiting from the large-scale uniformity of CNT films, FETs are designed and fabricated with a large channel width to present low internal resistance for the standard 50 Ω impedance matching guide line, which is critical to construct an RF amplifier. Furthermore, we first demonstrate amplifiers with a maximum power gain up to 11 dB and output third-order intercept point (OIP3) of 15 dBm, both at the K-band, which represents the record of a CNT amplifier and is even comparable with a commercial amplifier based on III−V RF transistors.
scite is a Brooklyn-based organization that helps researchers better discover and understand research articles through Smart Citations–citations that display the context of the citation and describe whether the article provides supporting or contrasting evidence. scite is used by students and researchers from around the world and is funded in part by the National Science Foundation and the National Institute on Drug Abuse of the National Institutes of Health.
hi@scite.ai
10624 S. Eastern Ave., Ste. A-614
Henderson, NV 89052, USA
Copyright © 2024 scite LLC. All rights reserved.
Made with 💙 for researchers
Part of the Research Solutions Family.