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Alpha-enolase (ENO1), also known as 2-phospho-D-glycerate hydrolase, is a metalloenzyme that catalyzes the conversion of 2-phosphoglyceric acid to phosphoenolpyruvic acid in the glycolytic pathway. It is a multifunctional glycolytic enzyme involved in cellular stress, bacterial and fungal infections, autoantigen activities, the occurrence and metastasis of cancer, parasitic infections, and the growth, development and reproduction of organisms. This article mainly reviews the basic characteristics and biological functions of ENO1.

Numerous bacteria, including pollutant-degrading bacteria can enter the viable but nonculturable state (VBNC) when they encounter harsh environmental conditions. VBNC bacteria, as a vast majority of potent microbial resource can be of great significance in environmental rehabilitation. It is necessary to study the VBNC state of pollutant-degrading bacteria under various stress conditions. The aim of this study was to determine whether Rhodococcus biphenylivorans could enter the VBNC state under oligotrophic and low temperature conditions, and to examine the changes of morphology, enzymatic activity and gene expressions that might underline such state. The obtained results indicated that R. biphenylivorans TG9T could enter into the VBNC state and recover culturability under favorable environmental conditions. Results from Illumina high throughput RNA-sequencing revealed that the up-regulated genes related to ATP accumulation, protein modification, peptidoglycan biosynthesis and RNA polymerase were found in the VBNC cells, and the down-regulated genes mainly encoded hypothetical protein, membrane protein and NADH dehydrogenase subunit, which render VBNC cells more tolerant to survive under inhospitable conditions. This study provides new insights into prevention and control of the VBNC state of pollutant-degrading bacteria for their better capabilities in environmental rehabilitation.

INTRODUCTIONTransparent conductive oxide (TCO) films such as In 2 O 3 , SnO 2 , and ZnO have received considerable attention due to their great technological importance in electronic and optoelectronic applications. 1À4 The structural, optical, and electrical characteristics of these TCO films depend on the film preparation methods and different postdeposition treatments. Furthermore, a major influence on the physical and electrical properties of these films is the film doping with different chemical elements. 5,6 The film properties can be improved or modified by controlling the doping level, which are used in many different applications. Thus, there is actually a great interest in the study of the correlation between the properties of TCO films and the concentration of doping elements.Zinc oxide (ZnO) is a well-known TCO semiconductor because of its attractive properties such as a wide direct band gap (3.37 eV), high transparence in visible and near-ultraviolet spectral regions, low electrical resistivity, high piezoelectric constants, and high chemical and thermal stability. 7À9 Moreover, these optical and electrical properties can be affected greatly by chemical doping with the group III elements of the periodic table. 10,11 Recent research has demonstrated that Al-, In-, and Ga-doped ZnO thin films are promising TCOs for advanced applications such as displays, electrochromic devices, etc. 12À14 On the basis of nontoxicity, low cost, and abundant raw materials, Al-doped ZnO (AZO) thin film is emerging as an alternative potential candidate to Sn-doped In 2 O 3 (ITO) thin film, which is the most important TCO material in practical applications nowadays. 2,15,16 AZO film shows remarkable electrical conductivity together with high charge density and mobility due to the spatially organized ZnO doped with Al 3þ .Various deposition techniques such as magnetron sputtering, pulsed laser deposition, chemical vapor deposition, spray pyrolysis,

HPV-negative women >50 years of age still require cervical screening