A drain-extended (DE) FinFET with a dual material gate (DMG) and a high-k field plate (FP), named DF-DeFF, is proposed for high-voltage RF applications. The FP induces the charge variation in the drain extension, which appears as either the extended depletion in the gate-off state or the electron accumulation in the gate-on state. Along with the FP, the DMG forms a step-like potential variation along the channel, which leads to electron acceleration and the screening effect on the drain-to-source voltage (VDS). These effects give significant advantages to the DC characteristics, including breakdown voltage (VBD) and on-resistance (Ron), and the RF characteristics, including transconductance (gm) and output-resistance (ro). Compared to the latest high-voltage RF FinFETs, the DF-DeFF shows a drastic improvement in the major performance indicators such as VBD, cut-off frequency (fT), and maximum oscillation frequency (fMAX). These results indicate that DF-DeFF is a FinFET with sufficient competitiveness even in high voltage circumstances.
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