The mass thickness of thin titanium oxide and hafnium oxide films grown by the atomic layer deposition method on silicon substrates was determined using EPMA data and STRATA and FLA programs. The results of the two programs coincided well if a set of relative intensities was measured at different energies of probe electrons. Comparative measurements by XRF gave higher values. Comparing the mass thicknesses of films measured by EPMA and absolute thicknesses determined by optical spectrophotometry, ellipsometry and profilometry, the densities of polycrystalline films were estimated. Values of 3.3±0.2 and 8.7±0.2 g cm−3 were obtained for TiO 2 anatase grown at 300 °C and monoclinic HfO 2 grown at 600 °C, respectively. Titanium oxide films deposited at 100 °C contained significant amounts of chlorine and hydroxyl groups (7.2±0.7 and 6.9±0.9 mass-%, respectively).had HfO 2 stripes on a silicon substrate. The film was deposited
The Feature Article [1] describes the current state of the Atomic Layer Deposition (ALD) technique for producing high‐quality thin layers with the focus on oxide materials such as ZrO2 and other rare earth oxides, SnO2 and ZnO for high‐k dielectrics, gas sensors and various optoelectronic applications.
The cover picture is a photograph of a thin‐film‐on‐silicon sample. The inset schematically illustrates the ALD growth of an oxide film on a surface where L refers to the precursor ligand.
The first author, Lauri Niinistö, is Professor of Inorganic Chemistry at Helsinki University of Technology. His current research is focused on the preparation and characterization of thin films for optoelectronic and electronic devices.
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