Composition and thickness determination of thin oxide films: comparison of different programs and methods

Abstract

The mass thickness of thin titanium oxide and hafnium oxide films grown by the atomic layer deposition method on silicon substrates was determined using EPMA data and STRATA and FLA programs. The results of the two programs coincided well if a set of relative intensities was measured at different energies of probe electrons. Comparative measurements by XRF gave higher values. Comparing the mass thicknesses of films measured by EPMA and absolute thicknesses determined by optical spectrophotometry, ellipsometry and profilometry, the densities of polycrystalline films were estimated. Values of 3.3±0.2 and 8.7±0.2 g cm−3 were obtained for TiO 2 anatase grown at 300 °C and monoclinic HfO 2 grown at 600 °C, respectively. Titanium oxide films deposited at 100 °C contained significant amounts of chlorine and hydroxyl groups (7.2±0.7 and 6.9±0.9 mass-%, respectively).had HfO 2 stripes on a silicon substrate. The film was deposited

SnO2 Films Deposited by Ultrasonic Spray Pyrolysis: Influence of Al Incorporation on the Properties

“…EDS analyses were performed at low acceleration voltage (6 keV) to limit the signal obtained from the substrate so that a low atomic number element in a low concentration could be detected. EMPA measurements were performed at three different electron beam acceleration voltage values (11, 16, and 22 keV) and the data were analyzed using the Stratagem program dedicated to the analysis of thin films [38]. Transmission electron microscopy (TEM) imaging was performed with a JEOL JEM 2010 microscope operating at 200 kV (0.19 nm resolution), equipped with energy-dispersive X-ray spectroscopy (EDX).…”

Atomic layer deposition of B2O3 thin films at room temperature

“…The amount of possible bromine impurities in selected samples were evaluated by X-ray fluorescence (XRF) in a Philips PW 1480 WDS spectrometer using Rh excitation and the results were verified by TOF-ERDA. Data were analysed with the Uniquant 4.34 program (Omega Data Systems, Netherlands), which is based on fundamental parameters and experimentally determined instrumental sensitivity factors [41,42].…”

Correlation between the method of preparation and the properties of the sol–gel HfO2 thin films

“…Several techniques have been taken into consideration for the preparation of HfO 2 films for COMOS devices, including atomic layer deposition (ALD) [10][11][12][13][14][15][16][17], photo-assisted layer deposition [18], evaporation with ion assisted deposition, sputtering [19][20][21][22], chemical vapor deposition, metalorganic chemical vapor deposition (MOCVD) [23] standard thermal evaporation [24] and molecular beam epitaxy (MBE) [9]. All these techniques require high temperature treatments which usually induce a deterioration of the device performance and reliability.…”