Correlation between the method of preparation and the properties of the sol–gel HfO2 thin films

Zaharescu, M.; Teodorescu, V. S.; Gärtner, M.; Blanchin, M. G.; Barau, A.; Anastasescu, Mihai

doi:10.1016/j.jnoncrysol.2007.07.097

Cited by 24 publications

(10 citation statements)

References 29 publications

(34 reference statements)

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“…In this work, four procedures showing the most promising approaches were evaluated to realize high quality inorganic dielectrics. The procedures mainly differ in the utilized precursors which are hafnium tetrachloride [30], hafnium ethoxide [31], hafnium pentanedionate [32] and hafnium isopropoxide [33]. The synthesis of the sol-gels was carried out as described in the respective publications and typically involved dissolving the precursor in a solvent followed by a reflux reaction at elevated temperatures to promote hydrolysis and polycondensation reactions.…”

Section: Resultsmentioning

confidence: 99%

“…The HfO 2 sol-gel solutions were prepared by the previously described methods [30][31][32][33]. Hafnium tetrachloride (HfCl 4 )-based sol-gels were prepared by dissolving HfCl 4 in 99.5% ethanol (EtOH) in an argon atmosphere, followed by the addition of a mixture of DI water and nitric acid (HNO 3 ) in air (molar ratio of components HfCl 4 :EtOH:HNO 3 : H 2 O=1:410:5:5).…”

Section: Preparation Of Hfo 2 Sol-gel Solutionsmentioning

confidence: 99%

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Photonic curing of sol–gel derived HfO2 dielectrics for organic field-effect transistors

Tetzner

Schroder

Bock

2014

Ceramics International

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An efficient way to reduce the supply voltages of organic field-effect transistors is the use of high-k inorganic materials. In order to allow high throughput during fabrication, solution-based processes for realizing inorganic dielectrics by using sol-gel procedures have become attractive in recent years. However, this procedure typically involves extended high-temperature annealing steps to achieve high-quality insulating layers which hampers fast fabrication and is incompatible to be carried out on low-temperature organic substrates. In this work, the use of a photonic curing technique is presented for the annealing of sol-gel derived hafnium oxide (HfO 2 ) dielectrics within a few seconds. The investigations demonstrate the reduction of the leakage current density of more than 3 orders of magnitude after the photonic curing process reaching only slightly higher values as obtained with dielectric films formed from highly sophisticated atomic layer deposition. Moreover, capacitance measurements reveal a dielectric constant of 26 indicating bulk-like properties. Furthermore, organic transistors based on photonically cured HfO 2 sol-gel dielectrics are fabricated and characterized operating at low voltages ( o 2 V), low subthreshold swing (110 mV/decade) and charge carrier mobilities of 1 cm 2 /Vs using a semiconducting liquid-crystal polymer.

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Section: Resultsmentioning

confidence: 99%

Section: Preparation Of Hfo 2 Sol-gel Solutionsmentioning

confidence: 99%

Photonic curing of sol–gel derived HfO2 dielectrics for organic field-effect transistors

Tetzner

Schroder

Bock

2014

Ceramics International

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“…The sol-gel process is suitable to produce both thin and thick films by single and multideposition techniques. Several papers dealing with planar waveguides fabricated with this method have been reported in literature [12][13][14][15][16].…”

Section: Introductionmentioning

confidence: 99%

Characterization of planar waveguides fabricated by multiple sol-gel dip-coatings

et al. 2011

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Planar step-index waveguides of SiO 2 :TiO 2 and ZrO 2 :CeO 2 in multilayer structures were prepared onto commercial glass substrates using a sol-gel technique combined with dip-coating. These coatings were previously optically characterized by Ellipsometry. These glassy coatings were structural characterized by Transmission Electron Microscopy (TEM), Energy Dispersive X-ray analysis and Confocal Microscopy. Thicknesses of 1050 nm and 500 nm and refractive indices of 1.64 and 2.07 for SiO 2 :TiO 2 (70:30) and ZrO 2 :CeO 2 (70:30) waveguides were obtained, respectively, by the analysis of the guided TE and TM modes observed by Dark m-line Spectroscopy. Losses of 1.32 dB/cm and 0.86 dB/cm were respectively measured by a method based on scattered light.

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“…andZaharescu et al~2008! for thin films deposited on silicon wafers is required in an increasing number of applications.…”

Section: Introductionmentioning

confidence: 99%

“…Structural investigation by transmission electron microscopy (TEM) for thin films deposited on silicon wafers is required in an increasing number of applications. Plan-view TEM and especially cross-section TEM (XTEM) observations are needed to obtain useful results, as shown, for example, in He et al (2004) and Zaharescu et al (2008) for the case of HfO 2 thin films deposited on silicon wafers.…”

Section: Introductionmentioning

confidence: 99%

Fast and Simple Specimen Preparation for TEM Studies of Oxide Films Deposited on Silicon Wafers

Teodorescu

Blanchin

2009

Microsc Microanal

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We present a fast and simple method to prepare specimens for transmission electron microscopy studies of oxide thin films deposited on silicon substrates. The method consists of scratching the film surface using a pointed diamond tip, in a special manner. Small and thin fragments are then detached from the film and its substrate. Depending on the scratching direction, the fragments can be used for plan-view or cross-section imaging. High-resolution images can be also obtained from thin edges of the film fragments. The method is demonstrated in the case of HfO2 sol-gel films deposited on [100] Si wafer substrates.

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Correlation between the method of preparation and the properties of the sol–gel HfO2 thin films

Cited by 24 publications

References 29 publications

Photonic curing of sol–gel derived HfO2 dielectrics for organic field-effect transistors

Photonic curing of sol–gel derived HfO2 dielectrics for organic field-effect transistors

Characterization of planar waveguides fabricated by multiple sol-gel dip-coatings

Fast and Simple Specimen Preparation for TEM Studies of Oxide Films Deposited on Silicon Wafers

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