2004
DOI: 10.1002/pssa.200406798
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Advanced electronic and optoelectronic materials by Atomic Layer Deposition: An overview with special emphasis on recent progress in processing of high-k dielectrics and other oxide materials

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Cited by 326 publications
(173 citation statements)
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“…It is believed by the authors that the ALD/FIB technique has the potential to push these boundaries in the future. From a fabrication point of view, both alumina (Niinistö et al, 2004) and iridium (Aaltonen et al, 2004) can be deposited via established ALD routes. It is also worth noting that t Optimum of all above-mentioned Al 2 O 3 /Ir ML-FZPs are of the order of only a few micrometers, which would help in reducing the impact of the previously mentioned effect of structural error accumulation in propagation direction as thickness increases.…”
Section: Materials Selection and Performance Expectations For Future mentioning
confidence: 99%
“…It is believed by the authors that the ALD/FIB technique has the potential to push these boundaries in the future. From a fabrication point of view, both alumina (Niinistö et al, 2004) and iridium (Aaltonen et al, 2004) can be deposited via established ALD routes. It is also worth noting that t Optimum of all above-mentioned Al 2 O 3 /Ir ML-FZPs are of the order of only a few micrometers, which would help in reducing the impact of the previously mentioned effect of structural error accumulation in propagation direction as thickness increases.…”
Section: Materials Selection and Performance Expectations For Future mentioning
confidence: 99%
“…ALD is a thermally activated gas phase process for synthesizing thin solid films by sequentially exposing an object to a series of two or more gaseous reactants, each of which undergoes self-limiting chemisorption surface reactions [19][20][21]. A sample is placed into the ALD vacuum chamber and heated (experimental details of ALD deposition can be found in the section "Methods").…”
Section: Introductionmentioning
confidence: 99%
“…23 these merits, the most attractive advantage for ALD to be used in modifying track-etched nanopores is its accurate and straightforward control of the thickness of the deposited films. In this work, we demonstrate a new type of devices with ALD modified polymer nanopores.…”
Section: Introductionmentioning
confidence: 99%