With the wide range of existing capacitors, the end user's requirements are roughly met but most of the capacitors see their performances largely impacted when they are submitted to high temperature. In this paper we present the Silicon Capacitors highly recommended for applications in the geothermal, oil well logging, automotive and military. They can operate in a wide operating temperature range and they withstand temperature up to 250°C, with extremely high insulation resistance and very good stability. These capacitors, already extensively used for years in miniaturized equipment and computers, feature high miniaturization with a large capacitance to volume ratio, thanks to the IPDiA 3D Silicon technology, extremely stable and reliable even at 100μm thickness. Available in hundreds or thousands of nanofarads, in various sizes and custom configurations, these capacitors are usable at low frequencies but they are also appropriate for RF applications. The recent progress in the 3D Silicon Capacitor IPDIA technology, which moves the world wide record from 250nF/mm2 up to 550nF/mm2, will give even more room to higher integration. This is an ultra key driver to growth for High reliability applications.
With the wide range of existing capacitors, the end user's requirements are roughly met but most of the capacitors see their performances largely impacted when they are submitted to high temperature. In this paper we present the Silicon Capacitors highly recommended for applications in the geothermal, oil well logging, automotive and military. They can operate in a wide operating temperature range and they withstand temperature up to 250°C, with extremely high insulation resistance and very good stability. These capacitors, already extensively used for years in miniaturized equipment and computers, feature high miniaturization with a large capacitance to volume ratio, thanks to the IPDiA 3D Silicon technology, extremely stable and reliable even at 100μm thickness. Available in hundreds or thousands of nanofarads, in various sizes and custom configurations, these capacitors are usable at low frequencies but they are also appropriate for RF applications. The recent progress in the 3D Silicon Capacitor IPDIA technology, which moves the world wide record from 250nF/mm2 up to 550nF/mm2, will give even more room to higher integration. This is an ultra key driver to growth for High reliability applications.
Radio-Frequency IDentification devices such as smart cards and RFID tags are based on the presence of a resonant tuned LC circuit associated to the RFID Integrated Circuit (IC). The use of discrete capacitor, external to the IC gives greater flexibility and design freedom. In the race of miniaturization, manufacturers of RFID devices always require smaller electronic components. To save space and in the same time improve performances, capacitors are exposed to height and volume constraints. In the same time, the capacitor has to withstand ESD stresses that can occur during the assembly of the device and during operation. Murata has developed a unique thin capacitor technology in silicon. This paper reports the development of a range of low profile capacitors with enhanced ESD performances. The manufacturing process optimization and the design adjustments will be presented here. The process was optimized by taking into account the main electrical parameters: leakage current, breakdown voltage, capacitance density, capacitance accuracy, Equivalent Series Resistance (ESR) and Self-Resonant Frequency (SRF). The dielectric stack was defined in order to integrate up to 330pF in 0402 case. The process architecture, based on accurate planar capacitor with thick dielectric will be discussed. With this architecture there is no constraint to reach low thickness, such as 100μm or even lower. The ESD threshold of each Silicon Capacitor was investigated with design variations associated to Human Body Model measurements. A Single Project Wafer (SPW) was founded with 36 different capacitor designs. Design modulations specifically addressed the orientation and position of the contacts openings. Special care was taken to maximize the width of the contact holes and metal tracks. A mosaic approach, constructed out of a massive network of parallelized elementary cells was also implemented, so that the charges of the ESD pulse do not concentrate at the same place, leading to electrical failure. Examples of defects due to ESD stress will be shown with failure analysis cross-sections and ways to enhance the ESD threshold by design will be illustrated.
This paper covers technological results achieved with silicon capacitors for Aerospace applications, including stability, reliability and frequency data at high temperatures, as well as thermal stress, vibration & shock tests and radiations stress, according to ESA TRP reference (n° T723-325QT).
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