In this study the switching characteristics of semiconductors are investigated as a main source of radiated electromagnetic interference (EMI). Especially, characteristic oscillations after the switching process influence the EMI characteristic of the circuit under investigation in the high frequency range. A method is introduced that analyses the turn-on and the turn-off characteristic of a MOSFET within a power factor correction stage separately, which are the critical source of EMI. A modified Hann window function is introduced in order to separate the frequency characteristic of the turn-on and turn-off characteristic. A generalised discussion on the mechanisms of radiated emissions in context with the transient behaviour is also given.
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