Influence of parasitic elements on radiated emissions of a boost converter

Middelstaedt, Lars; Lindemann, Andreas; Al-Hamid, Moawia; Vick, Ralf

doi:10.1109/isemc.2015.7256258

Cited by 9 publications

(9 citation statements)

References 6 publications

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“…However, it can be applied to more complex circuits as well. Equivalent circuits representing the most critical oscillation circuits during the switching process [13] a After the MOSFET is turned off with the diode conducting b After the MOSFET is turned on with the diode blocking…”

Section: Resultsmentioning

confidence: 99%

“…In addition, this approach offers the advantage of gaining a more detailed insight on the sources of EMI within the circuit. With appropriate investigations, as it was done in [13], this approach can help to develop sufficient simulation models in order to model the most critical phenomena within the board. In [21] a methodology was presented to analyse the turn-on and turn-off behaviour separately.…”

Section: Approach Of Separate Investigation Of Turn-on and Turn-off Smentioning

confidence: 99%

“…Using the methodology described above, the role of parasitic elements of the semiconductors on the oscillations were investigated in [13]. The most critical identified oscillation circuit is formed by MOSFET, diode and output buffer capacitance.…”

Section: W Tmentioning

confidence: 99%

“…These resonant circuits are the main cause for the oscillations during turn-on and turn-off respectively and determine the main resonant frequencies within the spectrum of the switching characteristic at 110 and 150 MHz as presented in more detail in [13].…”

Section: W Tmentioning

confidence: 99%

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Methodology for analysing radiated EMI characteristics using transient time domain measurements

Middelstaedt

Lindemann

2016

IET Power Electronics

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In this study the switching characteristics of semiconductors are investigated as a main source of radiated electromagnetic interference (EMI). Especially, characteristic oscillations after the switching process influence the EMI characteristic of the circuit under investigation in the high frequency range. A method is introduced that analyses the turn-on and the turn-off characteristic of a MOSFET within a power factor correction stage separately, which are the critical source of EMI. A modified Hann window function is introduced in order to separate the frequency characteristic of the turn-on and turn-off characteristic. A generalised discussion on the mechanisms of radiated emissions in context with the transient behaviour is also given.

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Section: Resultsmentioning

confidence: 99%

Section: Approach Of Separate Investigation Of Turn-on and Turn-off Smentioning

confidence: 99%

Section: W Tmentioning

confidence: 99%

Section: W Tmentioning

confidence: 99%

See 2 more Smart Citations

Methodology for analysing radiated EMI characteristics using transient time domain measurements

Middelstaedt

Lindemann

2016

IET Power Electronics

Self Cite

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show abstract

“…The most important effect to include in the model is the parasitic inductance between the Schottky diode, the MOSFETs and the input decoupling capacitors. As explained in numerous publications such as [6], these devices form a resonant loop as shown in Fig. 1.…”

Section: Modeling Of the Test Boardmentioning

confidence: 97%