Methodology for analysing radiated EMI characteristics using transient time domain measurements

Middelstaedt, Lars; Lindemann, Andreas

doi:10.1049/iet-pel.2015.0799

Cited by 12 publications

(4 citation statements)

References 19 publications

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“…6 b . Driver board isset to generate driving signals for insulated gate bipolar transistors andelectromagnetic interference can be neglected [30].…”

Section: Laboratory Test Resultsmentioning

confidence: 99%

Interaction and coordination between reactive compensation and harmonic suppression for three‐phase buck‐type D‐CAP

Chen

Dai

Zhang

et al. 2019

IET Power Electronics

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Dynamic capacitor (D-CAP) could be designed to compensate reactive power and suppress harmonic currents simultaneously by means of regulating DC and harmonic terms in duty-ratio modulation signal. However, the main constraint is that the amplitudes of DC and harmonic terms are always correlative, leading to the interaction between reactive and harmonic currents of D-CAP. To minimise mutual effects between reactive and harmonic currents, this study presents coordinated control between reactive compensation and harmonic suppression for buck-type D-CAP. The major concern of coordinated algorithm is to pre-estimate and select the DC and harmonic terms reasonably according to their inter-constraint relationship. Thus, D-CAP can optimise the generation of reactive and harmonic current references in different scenarios. Meanwhile, selective current control in multiple synchronous reference frames is employed to regulate reactive and harmonic current effectively. A series of experimental results are provided to verify the correctness of proposed coordinated control.

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“…6 b . Driver board isset to generate driving signals for insulated gate bipolar transistors andelectromagnetic interference can be neglected [30].…”

Section: Laboratory Test Resultsmentioning

confidence: 99%

Interaction and coordination between reactive compensation and harmonic suppression for three‐phase buck‐type D‐CAP

Chen

Dai

Zhang

et al. 2019

IET Power Electronics

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“…In switching mode power converters, the turn‐on and turn‐off of power semiconductors are the main cause of EMI as clearly reported in previous research works [20–23]. Indeed, during the switching operation, the parasitic capacitors resonate with the parasitic inductors of the circuit giving rise to transient oscillations.…”

Section: Theoretical Backgroundmentioning

confidence: 91%

Clamping diodes failure identification based on the discrete wavelet decomposition of the magnetic near‐field

Lahouar

Hamouda

Abari

et al. 2019

IET Power Electronics

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Diagnosis of static power converters for distributed power generation systems and electric machines is nowadays a common concern of researchers interested in the reliability of power electronic systems. The conventional diagnosis approaches such as those based on voltage, current, and flux analysis have already been well developed in recent decades. Recently, it was shown that the magnetic near-field measured above the power converter may carry substantial information about the health state of power components. This study proposes, therefore, a novel non-invasive diagnosis method based on the discrete wavelet decomposition of the near-field metered above a static power converter. It is proved that each faulty component can be identified by its appropriate electromagnetic signature. Accordingly, all faulty cases are easily distinguishable, which makes fault classification possible using very simple tools such as envelope detection. The proposed method is validated through experimental tests carried out on a three-phase three-level neutral point clamped inverter operating with faulty clamping diodes. Its advantages compared to previous diagnosis methods are also discussed.

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“…For a 1kW 400 V GaN HEMT device, the conducted EMI measured was found to be 20 dB higher at 500 KHz switching frequency compared to EMI at 50 kHz switching frequency. Thus, the conductive EMI is the most severe when WBG devices function at higher switching frequency and speed compared to Si-devices [86].…”

Section: Merits and Challenges Of Using Wbg Semiconductor Devicesmentioning

confidence: 99%

Wide Band Gap Devices and Their Application in Power Electronics

et al. 2022

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Power electronic systems have a great impact on modern society. Their applications target a more sustainable future by minimizing the negative impacts of industrialization on the environment, such as global warming effects and greenhouse gas emission. Power devices based on wide band gap (WBG) material have the potential to deliver a paradigm shift in regard to energy efficiency and working with respect to the devices based on mature silicon (Si). Gallium nitride (GaN) and silicon carbide (SiC) have been treated as one of the most promising WBG materials that allow the performance limits of matured Si switching devices to be significantly exceeded. WBG-based power devices enable fast switching with lower power losses at higher switching frequency and hence, allow the development of high power density and high efficiency power converters. This paper reviews popular SiC and GaN power devices, discusses the associated merits and challenges, and finally their applications in power electronics.

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Methodology for analysing radiated EMI characteristics using transient time domain measurements

Cited by 12 publications

References 19 publications

Interaction and coordination between reactive compensation and harmonic suppression for three‐phase buck‐type D‐CAP

Interaction and coordination between reactive compensation and harmonic suppression for three‐phase buck‐type D‐CAP

Clamping diodes failure identification based on the discrete wavelet decomposition of the magnetic near‐field

Wide Band Gap Devices and Their Application in Power Electronics

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