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Wavelength-stabilized operation is realized in broad area quantum dot laser diodes with cleaved facets grown in the tilted cavity laser (TCL) design for the range up to 1.3 µm. For two different designs TCL wavelength is chosen to be either in the range of quantum dot excited state transitions (1.16 µm), or in the range of quantum dot ground state transitions (1.27 µm). The shift of the lasing wavelength is 0.165 nm K −1 in a temperature range between −200 • C and 70 • C. The spectral width of the lasing emission in broad area devices is 0.6 nm and the width (FWHM) of the far field is 4 • and 42 • for lateral and vertical directions, respectively.

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The 1300 nm range vertical-cavity surface-emitting lasers with the active region based on InGaAs/InGaAlAs superlattice are fabricated using molecular-beam epitaxy and the double wafer-fusion technique. Lasers with the buried tunnel junction diameter of 5 μm have shown singlemode CW operation with the output optical power of ∼6 mW at 20°C. Opened eye diagrams are observed up to 10 Gbps.

1.5 µm-range laser diodes based on InAs/InGaAs quantum dots (QDs) grown on metamorphic (In, Ga, Al)As layers, which were previously deposited on GaAs substrates using a defect reduction technique (DRT), are studied. More than 7 W total output power operation in the pulsed mode is shown in broad area lasers. It is shown that the narrow stripe lasers operate in the continuous wave (CW) and the single transverse mode at current densities up to 22 kA cm −2 without significant degradation. CW output power in excess of 220 mW at 10 • C heat sink temperature is demonstrated. 800 mW single-mode output power in the pulsed regime is obtained. It is also shown that the lasers demonstrate the absence of beam filamentation up to the highest current densities studied. First studies on the dynamics of the lasers show a modulation bandwidth of ∼3 GHz, limited by device heating. Eye diagrams at 2.5 Gbit s −1 and room temperature (RT) have been performed. Aging tests demonstrate >800 h of CW operation at ∼50 mW at 10 • C heat sink temperature and >200 h at 20 • C heat sink temperature without decrease in optical output power. The results indicate the high potential of metamorphic growth using the DRT for practical applications, such as 1500 nm GaAs vertical cavity surface emitting lasers (VCSELs).

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