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Silicon p(+)-i-n(+) diode Mach-Zehnder electrooptic modulators having an ultra-compact length of 100 to 200 mum are presented. These devices exhibit high modulation efficiency, with a V(pi)L figure of merit of 0.36 V-mm. Optical modulation at data rates up to 10 Gb/s is demonstrated with low RF power consumption of only 5 pJ/bit.

We present data on nanofabricated suspended silicon wires driven at resonance. The wires are electrostatically driven and detected optically. We have observed wires with widths as small as 45 nm and resonant frequencies as high as 380 MHz. We see a strong dependence of the resonant quality factor on the surface to volume ratio.

SRAM cell stability will be a primary concern for future technologies due to variability and decreasing power supply voltages. 6T-SRAM can be optimized for stability by choosing the cell layout, device threshold voltages, and the ß ratio. 8T-SRAM, however, provides a much greater enhancement in stability by eliminating cell disturbs during a read access, thus facilitating continued technology scaling. We demonstrate the smallest 6T (0.124µm 2 half-cell) and full 8T (0.1998µm 2 ) cells to date.

Ultra-compact 5(th) order ring resonator optical filters based on submicron silicon photonic wires are demonstrated. Out-of-band rejection ratio of 40dB, 1dB flat-top pass band of 310GHz with ripples smaller than 0.4dB, and insertion loss of only (1.8+/-0.5)dB at the center of the pass band are realized simultaneously, all within a footprint of 0.0007mm(2) on a silicon chip.

We observe parametric amplification in a torsional micron-scale mechanical resonator. An applied voltage is used to make a dynamic change to the torsional spring constant. Oscillating the spring constant at twice the resonant frequency results in a phase dependent amplification of the resonant motion. Our results agree well with the theory of parametric amplification. By taking swept frequency measurements, we observe interesting structure in the resonant response curves.

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We report the fabrication and the operation of nanomechanical resonant structures in nanocrystalline diamond. For this purpose, continuous diamond films as thin as 80 nm were grown using microwave plasma enhanced chemical vapor deposition. The lateral dimensions of the fabricated structures were as small as 50 nm and the measured mechanical resonant frequencies were up to 640 MHz. The mechanical quality factors were in the range of 2500-3000 at room temperature. The elastic properties of these films obtained via the resonant measurements indicate a Young's modulus close to that of single-crystal diamond.