The ion-sputtering induced intermixing is studied by Monte-Carlo TRIM, molecular dynamics (MD) simulations, and Auger electron spectroscopy depth profiling (AES-DP) analysis in Pt/Ti/Si substrate (Pt/Ti) and Ta/Ti/Pt/Si substrate (Ti/Pt) multilayers. Experimental evidence is found for the asymmetry of intermixing in Pt/Ti, and in Ti/Pt. In Ti/Pt we get a much weaker interdiffusion than in Pt/Ti. The unexpected enhancement of the interdiffusion of the Pt atoms into the Ti substrate has also been demonstrated by simulations. We are able to capture the essential features of intermixing using TRIM and MD simulations for ion-beam sputtering and get reasonable values for interface broadening which can be compared with the experimental measurements. However, the origin of the asymmetry remains poorly understood yet.

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profiling, which revealed that the intermixed layer did not change during the harsh etching except the removal of its thin surface layer containing less than 20% SiC. The etching rate of the intermixed layer is orders of magnitude lower than that for poly-Si.

Si amorphous ͑41 nm͒/Cr polycrystalline ͑46 nm͒ multilayer structure was irradiated by 30 keV Ga + ions with fluences in the range of 25− 820 ions/ nm 2 using a focused ion beam. The effect of irradiation on the concentration distribution was studied by Auger electron spectroscopy depth profiling, cross-sectional transmission electron microscopy, and atomic force microscopy. The ion irradiation did not result in roughening on the free surface. On the other hand, the Ga + irradiation produced a strongly mixed region around the first Si/Cr interface. The thickness of mixed region depends on the Ga + fluence and it is joined to the pure Cr matrix with an unusual sharp interface. With increasing fluence the width of the mixed region increases but the interface between the mixed layer and pure Cr remains sharp. TRIDYN simulation failed to reproduce this behavior. Assuming that the Ga + irradiation induces asymmetric mixing, that is during the mixing process the Cr can enter the Si layer, but the Si cannot enter the Cr layer, the experimental findings can qualitatively be explained.

Auger electron spectroscopy (AES) depth profiles using the NiMVV (61 eV), CKLL (272 eV) and NiLMM (848 eV) lines were recorded for a 3 × (Ni(40 nm)/C(28 nm))/Si substrate sample. It was found that the Auger intensities corresponding to pure regions of the depth profile changed with depth. The behaviour of the change was different for the different layers and different Auger lines. The changes can be attributed to the change in the backscattering factor (BF) as the thickness of the sample changes due to the sputter removal. Zommer and Jablonski developed a Monte Carlo (MC) algorithm to calculate the BF for systems with a buried layer. This algorithm was applied to the present case; the intensities of the monitored Auger lines were calculated for the sample with decreasing thickness similarly to the Auger depth profiling. The agreement between the measured and calculated AES depth profiles is excellent. The MC calculation verifies that several layers contribute to the BF and thus the expressions developed for overlayer/substrate systems cannot be used.

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The relative sputtering yield of amorphous carbon with respect to polycrystalline nickel at Ar-ion bombardment was determined by means of Auger electron spectroscopy depth profiling as a function of the angle of incidence and projectile energy in the ranges of 49°–88° and 0.3–1keV, respectively. It was found that the relative sputtering yield YC∕YNi strongly increases with angle of incidence from 49° to 82°. At around 80° the sputtering yield of C is higher than that of Ni. Above 82° no dependence on the angle of incidence was found. The relative sputtering yield weakly depends on the energy of the projectile. The experimental results will be explained by the help of transport of ion in solid (TRIM) simulations.

The relative sputtering yield of carbon with respect to tantalum was determined for 1 keV Ar + ion bombardment in the angular range of 70• -82 • (measured from surface normal) by means of Auger electron spectroscopy depth profiling of C/Ta and Ta/C bilayers. The ion bombardment-induced interface broadening was strongly different for the C/Ta and Ta/C, whereas the C/Ta interface was found to be rather sharp, the Ta/C interface was unusually broad. Still the relative sputtering yields (Y C /Y Ta ) derived from the Auger electron spectroscopy depth profiles of the two specimens agreed well. The relative sputtering yields obtained were different from those determined earlier on thick layers, calculated by simulation of SRIM2006 and by the fitting equation of Eckstein. The difference increases with increase of angle of incidence.