The chemical resistance of nano-sized SiC rich composite coating

Abstract

profiling, which revealed that the intermixed layer did not change during the harsh etching except the removal of its thin surface layer containing less than 20% SiC. The etching rate of the intermixed layer is orders of magnitude lower than that for poly-Si.

Wafer-scale SiC rich nano-coating layer by Ar+ and Xe+ ion mixing

“…Here the profile starts with SiC concentrations larger than 20%. One can conclude that the good chemical resistance needs a SiC concentration of at least 20%; these findings are in good agreement with the previously reported ones [10].…”

“…It has been shown that the chemical resistance of the SiC rich intermixed layer is excellent if the SiC concentration is higher than 20% [10]. In all irradiation experiments reported above there were regions with SiC concentration larger than 20%.…”

“…We have also shown that such SiC containing layers provide an excellent chemical resistance against usual polysilicon etchants [10]. It should be mentioned, however, that a considerable part of the Ga ions used for mixing inevitably remains in the mixed region, which might be disadvantageous for certain applications.…”

“…The chemical resistance of the SiC rich coating layer depends on its thickness [10]. In general, depending on the specific application, various layer thicknesses are required.…”

“…Cross-Sectional Transmission Electron Microscopy (XTEM) and elemental mapping by Electron Energy Loss Spectrometry (EELS) has been applied to monitor the effect of IBM on the sample structure and morphology. The chemical resistance of the intermixed layer has been estimated by applying an etching test [10] combined by Rutherford backscattering spectrometry (RBS) analysis to detect etching induced structural changes in the multilayer structure.…”