Wafer-scale SiC rich nano-coating layer by Ar+ and Xe+ ion mixing

Battistig, G.; Gurban, S.; Sáfrán, György; Sulyok, A.; Németh, Attila; Panjan, Peter; Zolnai, Zsolt; Menyhárd, M.

doi:10.1016/j.surfcoat.2016.06.039

Cited by 5 publications

(12 citation statements)

References 19 publications

(31 reference statements)

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“…We have shown, however, that applying ion beam induced mixing (IBM) at room temperature on C/Si/C/Si/C multilayer structures nanosized SiC production occurred. It has also been shown that the appearance of the nanosized SiC-rich layer improves considerably the corrosion resistance of the irradiated sample . Applying various irradiation conditions on various sample structures, a correlation between the corrosion resistance of the sample and the amount and distribution of SiC determined by Auger electron spectroscopy (AES) depth profiling has been found .…”

Section: Introductionmentioning

confidence: 98%

“…It has also been shown that the appearance of the nanosized SiC-rich layer improves considerably the corrosion resistance of the irradiated sample. 7 Applying various irradiation conditions on various sample structures, a correlation between the corrosion resistance of the sample and the amount and distribution of SiC determined by Auger electron spectroscopy (AES) depth profiling has been found. 8 This observation provides the possibility of the tailoring of the corrosion resistance of a given sample; one must determine and produce the SiC amount and distribution necessary to reach the desired corrosion resistance.…”

Section: Introductionmentioning

confidence: 99%

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Design of Corrosion Resistive SiC Nanolayers

Racz

Menyhárd

2018

ACS Appl. Mater. Interfaces

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Recently, we have shown that the protecting layer of nanosize can be produced by means of ion beam mixing (IBM) of a Si/C multilayer system. The corrosion resistance of the layer correlated with the SiC amount and distribution, determined by Auger electron spectroscopy depth profiling. It has also been shown that the IBM of the Si/C system can be well described by TRIDYN simulation. By combining these two findings, it is possible to design protective layers for various arrangements of layer structure and irradiation conditions. Three different multilayer structures (with individual layer thicknesses falling in the range of 10-20 nm) have been irradiated by Ar and Xe ions at room temperature in the energy and fluence ranges of 40-120 keV and 0.25 × 10 to 6 × 10 ion/cm, respectively. The carbon and silicon depth distributions have been calculated by TRIDYN simulation. From these profiles applying a simple rule for compound formation, the SiC in-depth distributions were calculated. The resulting corrosion resistance has been measured by potentiodynamic corrosion test in 4 M KOH solution. Excellent correlation between these results and the in-depth distribution (calculated by TRIDYN simulation) of SiC has been found. Thus, the design of a protective SiC coatings operating in harsh environments is possible by applying fast and cheap simulation techniques.

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Section: Introductionmentioning

confidence: 98%

Section: Introductionmentioning

confidence: 99%

Design of Corrosion Resistive SiC Nanolayers

Racz

Menyhárd

2018

ACS Appl. Mater. Interfaces

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“…The corrosion resistance measured by the inverse of corrosion current density increased with the amount of SiC produced by the IBM and was much better for any studied sample than that of pure silicon. 19 For easier reference the former sample will be denoted as sample 20−20 and the latter one as sample 10−20.…”

Section: Introductionmentioning

confidence: 99%

Corrosion Resistance of Nanosized Silicon Carbide-Rich Composite Coatings Produced by Noble Gas Ion Mixing

Racz

Kerner

Németh

et al. 2017

ACS Appl. Mater. Interfaces

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Ion beam mixing has been used to produce a silicon carbide (SiC)-rich nanolayer for protective coating. Different C/Si/C/Si/C/Si(substrate) multilayer structures (with individual layer thicknesses falling in the range of 10-20 nm) have been irradiated by Ar and Xe ions at room temperature in the energy and fluence ranges of 40-120 keV and 1-6 × 10 ion/cm, respectively. The effects of ion irradiation, including the in-depth distribution of the SiC produced, was determined by Auger electron spectroscopy depth profiling. The thickness of the SiC-rich region was only some nanometers, and it could be tailored by changing the layer structure and the ion irradiation conditions. The corrosion resistance of the layers was investigated by potentiodynamic electrochemical test in 4 M KOH solution. The measured corrosion resistance of the SiC-rich layers was orders of magnitude better than that of pure silicon, and a correlation was found between the corrosion current density and the effective areal density of the SiC.

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“…We have shown previously that IBM of layer systems containing pure C and Si layers may result in formation of SiC rich layer [20,21]. The actual SiC concentration and the thickness of the produced layer depend on the conditions of the IBM and the initial layer structure.…”

Section: Production Of Sic Rich Layer By Means Of Ibmmentioning

confidence: 97%

“…Recently we have shown that it is possible to produce SiC nano-coating at room temperature by applying IBM on C/Si multilayer structures [20][21]; the produced coatings exhibited excellent corrosion resistance properties [22]. The simultaneous application of masks and ion irradiation on a properly chosen C/Si multilayer system would lead to one step compound and pattern formation.…”

Section: Introductionmentioning

confidence: 99%