Ion beam mixing has been used to produce a silicon carbide (SiC)-rich nanolayer for protective coating. Different C/Si/C/Si/C/Si(substrate) multilayer structures (with individual layer thicknesses falling in the range of 10-20 nm) have been irradiated by Ar and Xe ions at room temperature in the energy and fluence ranges of 40-120 keV and 1-6 × 10 ion/cm, respectively. The effects of ion irradiation, including the in-depth distribution of the SiC produced, was determined by Auger electron spectroscopy depth profiling. The thickness of the SiC-rich region was only some nanometers, and it could be tailored by changing the layer structure and the ion irradiation conditions. The corrosion resistance of the layers was investigated by potentiodynamic electrochemical test in 4 M KOH solution. The measured corrosion resistance of the SiC-rich layers was orders of magnitude better than that of pure silicon, and a correlation was found between the corrosion current density and the effective areal density of the SiC.

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Recently, we have shown that the protecting layer of nanosize can be produced by means of ion beam mixing (IBM) of a Si/C multilayer system. The corrosion resistance of the layer correlated with the SiC amount and distribution, determined by Auger electron spectroscopy depth profiling. It has also been shown that the IBM of the Si/C system can be well described by TRIDYN simulation. By combining these two findings, it is possible to design protective layers for various arrangements of layer structure and irradiation conditions. Three different multilayer structures (with individual layer thicknesses falling in the range of 10-20 nm) have been irradiated by Ar and Xe ions at room temperature in the energy and fluence ranges of 40-120 keV and 0.25 × 10 to 6 × 10 ion/cm, respectively. The carbon and silicon depth distributions have been calculated by TRIDYN simulation. From these profiles applying a simple rule for compound formation, the SiC in-depth distributions were calculated. The resulting corrosion resistance has been measured by potentiodynamic corrosion test in 4 M KOH solution. Excellent correlation between these results and the in-depth distribution (calculated by TRIDYN simulation) of SiC has been found. Thus, the design of a protective SiC coatings operating in harsh environments is possible by applying fast and cheap simulation techniques.

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