Growth of amorphous SiC film on Si by means of ion beam induced mixing

Barna, Á.; Gurban, S.; Kotis, L.; Lábár, János L.; Sulyok, A.; Tóth, A.L.; Menyhárd, M.; Kovač, Janez; Panjan, Peter

doi:10.1016/j.apsusc.2012.09.063

Cited by 15 publications

(29 citation statements)

References 20 publications

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“…We have shown that SiC rich nano layers in the range of 5-20 nm can be produced by ion mixing of C and Si layers [15]. The thickness and composition of the ion mixed layer can be tailored by changing the fluence and/or energy of the irradiation.…”

mentioning

confidence: 99%

The chemical resistance of nano-sized SiC rich composite coating

Gurban

Kotis

Pongrácz

et al. 2015

Surface and Coatings Technology

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confidence: 99%

The chemical resistance of nano-sized SiC rich composite coating

Gurban

Kotis

Pongrácz

et al. 2015

Surface and Coatings Technology

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“…The distribution measured by the AES is close to that which is predicted by the Dynamic Transport of Ion in Solid (TRIDYN) code [8,12], that is, the measured Ga profile is realistic one. The in-depth distribution of the Ga loss peak revealed by REELS measurement, that is, the distribution of the Ga particles (large enough to facilitate plasmon excitation) is significantly different from the elemental distribution, and it is much thinner.…”

Section: Discussionmentioning

confidence: 48%

“…This point will be demonstrated by the following. was discussed in detail in ref [8]. If the fluence was increased only by about 30% to 80 x 10 15 ions/cm 2 , the AES did not show any dramatic changes; the measured concentration increased slightly as it is expected.…”

Section: Discussionmentioning

confidence: 89%

“…It is also clear that besides the original elements, a large amount of implanted Ga also appeared in the intermixed 8 layer. It can be also concluded by varying the fluence of irradiation that the amount of the SiC produced scales with the square root of fluence, etc; all these results are discussed in detail in [8]. Figure 3 shows the REELS depth profile.…”

Section: Discussionmentioning

confidence: 99%

“…The simple relative sensitivity factor method was applied for the evaluation of the AES as is described in ref [8].…”

Section: Evaluation Of Aes and Reels Spectramentioning

confidence: 99%

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Detection of nanoparticles by means of reflection electron energy loss spectroscopy depth profiling

Menyhárd¹

2013

J. Phys. D: Appl. Phys.

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The various studies of nanoparticles are of great importance because of the wide application of nanotechnology. The shape and structure of the nanoparticles can be determined by transmission electron microscopy (TEM) while their chemistry by electron energy loss spectroscopy (EELS).TEM sample preparation is an expensive and difficult procedure, however. Surface sensitive, analytical techniques, like Auger electron spectroscopy (AES), X-ray photoelectron spectroscopy (XPS) are well applicable to detect the atoms that make up the nanoparticles, but cannot tell whether particle-formation occurred. On the other hand, reflection electron loss spectroscopy (REELS) probes the electronic structures of atoms, which are strongly different for the atoms being in solution or in precipitated form. If the particle size is in the nm range, plasmon resonance can be excited in it, which appears as a loss feature in REELS spectrum. Thus, by measuring AES (XPS) spectra parallel with those of REELS, besides the atomic concentrations the presence of the nanoparticles can also be identified. As an example, the appearance of nano particles during ion beam induced mixing of C/Si layer will be shown.2

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