The use of megaelectronvolt phosphorus implantation in the formation of the buried layer of bipolar transistors was investigated. The main focus was on the reduction of the secondary defect density. The lowest defect density is obtained with annealing by rapid thermal processing (115O0C/6O s). Results on electrical characteristics of bipolar transistors with megaelectronvolt-implanted buried layers are presented and compared with those of conventional devices.
It is found that a small hillock arises in most cases prior to the appearance of an etch pit.There are various particular shapes of pits in the initial stage. Only on further etch attack these pits transform into the well-known flat-bottomed and triangular shapes. From this it is concluded that small stacking faults or related defects are responsible for the swirl-etch pit formation. Precipitation of oxygen or hydrogen around the defects may occur causing the initial hillock formation. Die Entwicklung von Swirl-Atzgruben auf versetzungsfreien Siliziumscheiben wurde genauer untersucht. Es zeigte sich, daD in den meisten Fallen dem Auftreten von Atzgruben eine Hugelbildung vorausgeht. Die Atzgruben selbst zeigen im Anfangszustand verschiedenartige Formen. Erst nach weiterer Atzung gehen sie in die bekannten dreieckigen Flachgruben u b x . Wir schlieBen daraus, daD kleine Stapelfehler oder damit verwandte Defekte die Swirl-Atzgruben hervorrufen. Eine eventuell an diesen Defekten vorliegende Sanerstoffoder Wasserstoffausscheidung konnte die anfangliche Hiigelbildung bewirken.
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