TEM observation of dislocation loops correlated with individual swirl defects in as-grown silicon

Bernewitz, L. I.; Kolbesen, Bernd O.; Mayer, K. R.; Schuh, G. E.

doi:10.1063/1.1655471

Cited by 49 publications

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“…It has also been reported that dislocation-free silicon wafers subjected to h e a t -t r e a t m e n t s often reveal a n u m b e r of circular stacking faults (13)(14) and prismatic dislocation loops (14)(15)(16) either in the (111)-or (001)-oriented wafers. P a r t i c u l a r l y when float-zoned, dislocation-free silicon wafers containing grown-in defects along swirls were t h e r m a l l y oxidized, a number of circular stacking faults were also preferentially generated along swirls.…”

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confidence: 98%

Cross‐Slip Dislocations and Their Multiplication in (001)‐Oriented Silicon Wafers

Matsui

1975

J. Electrochem. Soc.

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confidence: 98%

Cross‐Slip Dislocations and Their Multiplication in (001)‐Oriented Silicon Wafers

Matsui

1975

J. Electrochem. Soc.

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“…2 They have been, therefore, studied by employing a wide range of characterization techniques and several models to describe their behavior have been proposed. 3,4 The combination of chemical treatment, 5,6 improved optical analysis, 7 and then transmission electron microscope 8 has allowed describing in detail the geometrical properties as well as the growth and the diffusion of these dislocations. Other studies described also their optical properties.…”

Section: Introductionmentioning

confidence: 99%

Optical and recombination properties of dislocations in cast-mono silicon from short wave infrared luminescence imaging

Ory¹,

Hildebrandt²,

Lombez

2020

Journal of Applied Physics

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We demonstrate the use of the D1/D2 defect luminescence spectral range (1400 nm < λ < 1700 nm) of dislocations in cast-mono silicon to access geometrical tilt and opto-electronic recombination properties in their vicinity. The angle between dislocation and surface was determined thanks to the spatial asymmetry of the PL intensity in the regions close to the dislocations. Our optical model relies on the classical recombination-diffusion continuity equation as well as simple optical absorption and light propagation properties. It takes advantage of the optical transparency of silicon for wavelengths above 1400 nm. Carrier transport properties such as nonradiative lifetime around that location are also investigated. The model is discussed with a parameter study and the unicity of the extracted parameter set has been confirmed. As an example, we find out an angle of a selected dislocation pattern of about 25.4°with respect to the surface and an effective lifetime of 0.8-0.9 μs.

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“…For synthesizing silicon substrates used in semiconductor manufacturing, dislocation-free and defect-free single crystals are initially grown as ingots and subsequently processed into wafers. Microscopically, however, numerous point defects are usually present in silicon crystals, [1][2] consequently resulting in dislocation loops generation [3][4] and precipitate formation by oxygen incorporated during the crystal growth. [5][6] Moreover, damages such as micro scratches are introduced during wafer processing, and in the subsequent heat treatment process, dislocations are generated starting from these defects.…”

Section: Introductionmentioning

confidence: 99%

Influence of impurities on mechanical strength of silicon crystal

Takata¹,

Fujise²,

Ko³

et al. 2019

Jpn. J. Appl. Phys.

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The change in the mechanical strength of silicon wafers due to the impurity atoms introduced as dopants in them was investigated by a three-point bending test and finite element method (FEM) simulation. As representatives of p-type and n-type dopant species, boron and phosphorus were used. Stress–strain curves were obtained with samples having three levels of impurity concentrations, and the upper yield stresses were evaluated to investigate the influence of the impurities on the mechanical strength. In the case of boron in the experimental results, there was no change in the strength with the doping concentration, and the upper yield stress remained constant. Contrastingly, the phosphorus-doped samples showed a decrease in the upper yield stress with the doping concentration increase. FEM simulation of the three-point bending test and analysis of the simulation results showed that the dislocation velocity, i.e., the activation energy of the dislocation motion, varies according to the concentration. This suggested that the dislocation velocity changed based on the concentration of the added impurities strongly influenced the mechanical strength of silicon.

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TEM observation of dislocation loops correlated with individual swirl defects in as-grown silicon

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Cited by 49 publications

References 3 publications

Cross‐Slip Dislocations and Their Multiplication in (001)‐Oriented Silicon Wafers

Cross‐Slip Dislocations and Their Multiplication in (001)‐Oriented Silicon Wafers

Optical and recombination properties of dislocations in cast-mono silicon from short wave infrared luminescence imaging

Influence of impurities on mechanical strength of silicon crystal

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