Diffusion of boron and arsenic from implantation doped polycrystalline silicon films into single-crystal silicon was investigated as a function of various process parameters. The effects of interface treatment prior to poly-Si deposition and of the poly-Si grain size are analyzed. New data on dopant segregation are presented. Limitations of present process modeling tools are discussed and improved values for several input parameters are proposed.
Argon, hydrogen, and germane plasmas were investigated in a variably configured radio frequency (rf) diode glow-discharge reactor system with a range of rf powers. Plasma parameters such as electron temperature, plasma density, plasma potential, and floating potential were determined and the internal distribution of voltages within the glow discharge was considered. An equivalent circuit for the discharge is presented and fundamental dependence between the voltage ratio and the electrode area ratio of squared power law compared with the usual fourth power law is measured and described. The main goal of this work was to obtain more information about the energy of ion bombardment on the growing film surface.
The diffusion of B and As from polycrystalline Si into single-crystal Si during rapid optical annealing (ROA) has been investigated. Samples were characterized by secondary ion mass spectrometry, transmission electron microscopy, and sheet resistance measurements. It is demonstrated that very shallow diffusion profiles in the single-crystal Si can be formed by ROA. At 1050 °C/5 s, for instance, a junction depth of ∼35 nm is obtained for As diffusion. The effect of polycrystalline Si/mono-Si interface treatment on the dopant diffusion and the polycrystalline Si grain structure will be discussed.
The use of megaelectronvolt phosphorus implantation in the formation of the buried layer of bipolar transistors was investigated. The main focus was on the reduction of the secondary defect density. The lowest defect density is obtained with annealing by rapid thermal processing (115O0C/6O s). Results on electrical characteristics of bipolar transistors with megaelectronvolt-implanted buried layers are presented and compared with those of conventional devices.
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