The influence of electrode areas on radio frequency glow discharge

Abstract

Argon, hydrogen, and germane plasmas were investigated in a variably configured radio frequency (rf) diode glow-discharge reactor system with a range of rf powers. Plasma parameters such as electron temperature, plasma density, plasma potential, and floating potential were determined and the internal distribution of voltages within the glow discharge was considered. An equivalent circuit for the discharge is presented and fundamental dependence between the voltage ratio and the electrode area ratio of squared power law compared with the usual fourth power law is measured and described. The main goal of this work was to obtain more information about the energy of ion bombardment on the growing film surface.

Determination of plasma parameters in rf glow-discharge plasma

“…The simulation by the model shows a dependence d s / f À0. 5 . We accept that the incorrect dependence of (U p À U rf ) max on f experimental data is perhaps the cause of difference between our values (À0.5 and À0.66) in the dependence d s / f n .…”

“…In this case, the varying sheath potentials modulate the current sampled by the probe [1] and cause a change in the shape of the characteristic I-U curves [2]. In order to overcome this problem various techniques have been introduced to force the probe potential to follow the variations of the plasma potential [3][4][5]. They realized the transfer of rf potential on the probe by a compensating electrode [4] or a varying capacitance [5].…”

“…In order to overcome this problem various techniques have been introduced to force the probe potential to follow the variations of the plasma potential [3][4][5]. They realized the transfer of rf potential on the probe by a compensating electrode [4] or a varying capacitance [5]. These techniques allow a diagnosis as if it was being done in a dc plasma.…”

Deposition of Plasma-Polymerized Styrene under Ion Bombardment

“…The distance between the powered electrode and the top plate was 9.5 cm. A self-bias voltage was developed at the powered electrode due to the asymmetry of electrodes (21). A Penning gauge and a Baratron pressure gage were used for measuring reactor pressure.…”

Effect of gas composition and bias voltage on the structure and properties of a-C:H/SiO2 nanocomposite thin films prepared by plasma-enhanced chemical-vapor deposition

“…The bias voltage originates from the asymmetry in the areas of the cathode and anode. 17 This ion bombardment alters structure, stress, and hardness of the deposited film. For example, in depositing a-C:H films, increasing ion energy generally reduces the hydrogen content in the film, increases the film stress, and changes the film hardness and optical properties.…”