The capacity to propagate magnetic domain walls with spin-polarized currents underpins several schemes for information storage and processing using spintronic devices. A key question involves the internal structure of the domain walls, which governs their response to certain current-driven torques such as the spin Hall effect. Here we show that magnetic microscopy based on a single nitrogen-vacancy defect in diamond can provide a direct determination of the internal wall structure in ultrathin ferromagnetic films under ambient conditions. We find pure Bloch walls in Ta/CoFeB(1 nm)/MgO, while left-handed Néel walls are observed in Pt/Co(0.6 nm)/AlO x . The latter indicates the presence of a sizable interfacial Dzyaloshinskii-Moriya interaction, which has strong bearing on the feasibility of exploiting novel chiral states such as skyrmions for information technologies.

The control of domain walls in magnetic wires underpins an emerging class of spintronic devices. Propagation of these walls in imperfect media requires defects that pin them to be characterized on the nanoscale. Using a magnetic microscope based on a single nitrogen-vacancy (NV) center in diamond, we report domain-wall imaging on a 1-nanometer-thick ferromagnetic nanowire and directly observe Barkhausen jumps between two pinning sites spaced 50 nanometers apart. We further demonstrate in situ laser control of these jumps, which allows us to drag the domain wall along the wire and map the pinning landscape. Our work demonstrates the potential of NV microscopy to study magnetic nano-objects in complex media, whereas controlling domain walls with laser light may find an application in spintronic devices.

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The electric (E) field control of magnetic properties opens the prospects of an alternative to magnetic field or electric current activation to control magnetization. Multilayers with perpendicular magnetic anisotropy (PMA) have proven to be particularly sensitive to the influence of an E-field due to the interfacial origin of their anisotropy. In these systems, E-field effects have been recently applied to assist magnetization switching and control domain wall (DW) velocity. Here we report on two new applications of the E-field in a similar material :controlling DW nucleation and stopping DW propagation at the edge of the electrode.The possibility of controlling magnetic properties with an E-field via magneto-electric (ME) effects was initially envisaged in multiferroïcs 1 or magnetic semiconductors 2 . As the majority of these materials loses their ferromagnetic properties at room temperature the recent discovery of

This study presents the effective tuning of perpendicular magnetic anisotropy in CoFeB/MgO thin films by He+ ion irradiation and its effect on domain wall motion in a low field regime. Magnetic anisotropy and saturation magnetisation are found to decrease as a function of the irradiation dose which can be related to the observed irradiation-induced changes in stoichiometry at the CoFeB/MgO interface. These changes in the magnetic intrinsic properties of the film are reflected in the domain wall dynamics at low magnetic fields (H) where irradiation is found to induce a significant decrease in domain wall velocity (v). For all irradiation doses, domain wall velocities at low fields are well described by a creep law, where Ln(v) vs. H−1∕4 behaves linearly, up to a maximum field H*, which has been considered as an approximation to the value of the depinning field Hdep. In turn, H* ≈ Hdep is seen to increase as a function of the irradiation dose, indicating an irradiation-induced extension of the creep regime of domain wall motion.

The possibility to tune the Dzyaloshinskii Moriya interaction (DMI) by electric (E) field gating in ultra-thin magnetic materials has opened new perspectives in terms of controlling the stabilization of chiral spin structures. Most recent efforts have used voltage-induced charge redistribution at the interface between a metal and an oxide to modulate DMI. This approach is attractive for active devices but it tends to be volatile, making it energy demanding, and it is limited by Coulomb screening in the metal. Here we have demonstrated the non-volatile E-field manipulation of DMI by ionic liquid gating of Pt/Co/HfO2 ultra-thin films. The E-field effect on DMI scales with the E-field exposure time and is proposed to be linked to the migration and subsequent anchoring of oxygen species from the HfO2 layer into the Co and Pt layers. This effect permanently changes the properties of the material showing that E-fields can not only be used for local gating in devices but also as a highly scalable materials design tool for post-growth tuning of DMI.

The interfacial Dzyaloshinskii-Moriya Interaction (DMI) plays a crucial role in chiral domain wall (DW) motion, favoring fast DW velocities. We explore the effect of interface disorder on DMI and DW dynamics in perpendicular magnetized Ta/CoFeB/MgO thin films. Light He + irradiation has been used to gently engineer interface intermixing on a scale of 0.1 nm. We demonstrate that a slight modification of the Ta/CoFeB interface leads to an increase of the DMI value accompanied by an enhancement of DW velocity in the flow regime. Using micromagnetic simulations based on granular structures, we show that the enhancement of DW velocity is mainly related to an increase in the distribution of magnetic parameters related to the interface. We further infer that the DMI modulation is related to the asymmetric disorder induced by irradiation leading to alloying with the Ta buffer layer. Understanding the role of disorder is therefore crucial for the design of future devices where post-growth interface alloying can be used to finely tune the DMI.

Efficient spin current generation in low-damping Mg(Al, Fe) 2 O 4 thin films