Low depinning fields in Ta-CoFeB-MgO ultrathin films with perpendicular magnetic anisotropy

Burrowes, C.; Vernier, N.; Adam, Jean-Paul; Diez, L. Herrera; Garcia, K.; Barisic, I.; Agnus, Guillaume; Eimer, Sylvain; Kim, Joo-Von; Devolder, T.; Lamperti, Alessio; Mantovan, R.; Ockert, B.; Fullerton, Eric E.; Ravelosona, D.

doi:10.1063/1.4826439

Cited by 96 publications

(111 citation statements)

References 23 publications

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“…And the values of α are generally larger than those reported in the cases of in-plane UMA. These above studies clearly show that α depends strongly on the CoFeB film thickness13 while weakly on the Co or Fe concentration with the composition of B fixed at 20%16. Although FMR and TRMOKE can be both employed to determine the value of α , since the magnetization precession is excited by different ways, i.e.…”

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confidence: 92%

Gilbert damping in CoFeB/GaAs(001) film with enhanced in-plane uniaxial magnetic anisotropy

Liu

Huang

et al. 2017

Sci Rep

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A 3.5 nm amorphous CoFeB film was sputtered on GaAs (001) wafer substrate without applying magnetic field during deposition, and a significant in-plane uniaxial magnetic anisotropy (UMA) field (Hu) of about 300 Oe could be achieved. To precisely determine the intrinsic Gilbert damping constant (α) of this film, both ferromagnetic resonance (FMR) and time-resolved magneto-optical Kerr effect (TRMOKE) techniques were utilized. With good fitting of the dynamic spectra of FMR and TRMOKE, α is calculated to be 0.010 and 0.013, respectively. Obviously, the latter is 30% larger than the former, which is due to the transient heating effect during the TRMOKE measurement. In comparison with ordinary amorphous CoFeB films with negligible magnetic anisotropies, α is enhanced significantly in the CoFeB/GaAs(001) film, which may be mainly resulted from the enhanced spin-orbit coupling induced by the CoFeB/GaAs interface. However, the significant in-plane UMA plays minor role in the enhancement of α.

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confidence: 92%

Gilbert damping in CoFeB/GaAs(001) film with enhanced in-plane uniaxial magnetic anisotropy

Liu

Huang

et al. 2017

Sci Rep

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“…In addition, we demonstrate that this behaviour can be understood over the full range of DW dynamics by electric field-induced modulation of the magnetic anisotropy. Our approach makes use of Ta/CoFeB/MgO films with PMA, for which the density of pinning sites and the damping are very low212223 with respect to other PMA materials such as Co/Pt1924 or Co/Ni1825. In addition, PMA at the CoFeB/MgO interface can be manipulated efficiently through gate voltage control1516.…”

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confidence: 99%

Universal domain wall dynamics under electric field in Ta/CoFeB/MgO devices with perpendicular anisotropy

et al. 2016

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Electric field effects in ferromagnetic metal/dielectric structures provide a new route to control domain wall dynamics with low-power dissipation. However, electric field effects on domain wall velocities have only been observed so far in the creep regime where domain wall velocities are low due to strong interactions with pinning sites. Here we show gate voltage modulation of domain wall velocities ranging from the creep to the flow regime in Ta/Co 40 Fe 40 B 20 /MgO/TiO 2 structures with perpendicular magnetic anisotropy. We demonstrate a universal description of the role of applied electric fields in the various pinning-dependent regimes by taking into account an effective magnetic field being linear with the electric field. In addition, the electric field effect is found to change sign in the Walker regime. Our results are consistent with voltage-induced modification of magnetic anisotropy. Our work opens new opportunities for the study and optimization of electric field effect at ferromagnetic metal/insulator interfaces.

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“…Then it increases with further increase of the Mg thickness and reaches the value of 20 Oe, which is reported in previous publications of low depinning fields in Ta/CoFeB/MgO system. 18 The absolute value of the negative depinning field follows almost the same change as the positive depinning field. Obviously, the insertion of Mg layer can improve the depinning field.…”

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confidence: 62%

Interface control of domain wall depinning field

Huang

Wang

et al. 2018

AIP Advances

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We study the impact of Mg insertion layer at the CoFeB|MgO interface on the domain wall depinning field and motion as well as other magnetic properties in a perpendicular magnetized Ta/CoFeB/Mg(wedged)/MgO structure. With the increase of the Mg layer from 0.4 nm to 0.8 nm, the field-induced domain wall moving velocity increases while the depinning field decreases. The minimum depinning field of around 10 Oe for as-grown sample and 7 Oe for annealed sample is found with a 0.8 nm Mg insertion layer, which is 2 times lower than the ones reported before. Further increase of the Mg layer leads to a lower velocity and higher depinning field. Similar phenomena happens to the magnetic properties such as the saturation magnetization and perpendicular magnetic anisotropy. Both for as-grown and annealed samples, the tendency is similar. This may be explained by the oxidation and crystallinity manipulation of the CoFeB|MgO interface. These results show an ultra-low depinning field in the Ta/CoFeB/MgO system as well as a possible way for controlling the depinning field.

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Low depinning fields in Ta-CoFeB-MgO ultrathin films with perpendicular magnetic anisotropy

Cited by 96 publications

References 23 publications

Gilbert damping in CoFeB/GaAs(001) film with enhanced in-plane uniaxial magnetic anisotropy

Gilbert damping in CoFeB/GaAs(001) film with enhanced in-plane uniaxial magnetic anisotropy

Universal domain wall dynamics under electric field in Ta/CoFeB/MgO devices with perpendicular anisotropy

Interface control of domain wall depinning field

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