Universal domain wall dynamics under electric field in Ta/CoFeB/MgO devices with perpendicular anisotropy

Lin, Weiwei; Vernier, N.; Agnus, Guillaume; Garcia, K.; Ocker, B.; Zhao, Weisheng; Fullerton, Eric E.; Ravelosona, D.

doi:10.1038/ncomms13532

Cited by 44 publications

(35 citation statements)

References 39 publications

(116 reference statements)

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“…The EF-induced variation of v for the thermally activated creep regime has been in the range from 10 −3 to 10 −5 m/s ( 11 – 13 ). For the flow regime, only a few meters per second of v change was observed in the Ta/CoFeB/MgO system ( 14 ). The most important point here is that the saturation v ( v s ) is changed by the EF application.…”

Section: Resultsmentioning

confidence: 99%

Electric field control of magnetic domain wall motion via modulation of the Dzyaloshinskii-Moriya interaction

et al. 2018

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Section: Resultsmentioning

confidence: 99%

Electric field control of magnetic domain wall motion via modulation of the Dzyaloshinskii-Moriya interaction

et al. 2018

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“…For efficient electrical manipulation of magnetic skyrmions, voltage or electric field control of magnetism is a more promising pathway [6,193,209,[299][300][301][302][303]. This aspect -electrical control of topological spin textures, also beautifully illustrates the synergies between two different aspects of modern magnetism.…”

Section: Perspectivesmentioning

confidence: 95%

Skyrmions in magnetic multilayers

et al. 2017

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Symmetry breaking together with strong spin-orbit interaction give rise to many exciting phenomena within condensed matter physics. A recent example is the existence of chiral spin textures, which are observed in magnetic systems lacking inversion symmetry. These chiral spin textures, including domain walls and magnetic skyrmions, are both fundamentally interesting and technologically promising. For example, they can be driven very efficiently by electrical currents, and exhibit many new physical properties determined by their real-space topological characteristics. Depending on the details of the competing interactions, these spin textures exist in different parameter spaces. However, the governing mechanism underlying their physical behaviors remain essentially the same. In this review article, the fundamental topological physics underlying these chiral spin textures, the key factors for materials optimization, and current developments and future challenges will be discussed. In the end, a few promising directions that will advance the development of skyrmion based spintronics will be highlighted.This review article is organized as follows:1. Topological physics of magnetic skyrmions 1.1 Origin of spin topology 1.2 Real space topological physics 1.3 Topological distinction of bubble-like spin textures 2. Interfacial chiral magnetism 2.1 From spin spiral to chiral domain wall 2.2 Physical origin of the chiral interfacial DMI 2.3 Measurement of the interfacial DMI 2.4 Unique advantages of magnetic skyrmions in heterostructures 3. Current developments in thin-film skyrmions 3.1 Writing and deleting a single skyrmion 3.2 Blowing magnetic skyrmion bubbles 3.3 Moving skyrmions in wires 3.4 Magnetic skyrmions in asymmetric trilayers 3.5 Characteristics of topological trivial bubbles 3.6 Hall effect of topological charge -skyrmion Hall effect 3.7 High frequency dynamics of magnetic skyrmion 3.8 Artificial skyrmions stabilized by interlayer coupling in thin films 3.9 Novel spin-resolved imaging techniques 3.9.1 Lorentz transmission electron microscopy 3.9.2 Spin-polarized low energy electron microscopy 3.9.3 Photoemission electron microscopy 4. PerspectivesRecent advancements in nanotechnology resulted in concomitant progress in magnetism, with two developments being particularly influential in nanomagnetic systems: controlling magnets via electric (field/current) excitations [5][6][7][8] and the discovery of topological spin textures [9]. Electric control of magnetism is made possible by utilizing the coupling between electron spin and its orbital motion.

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“…In this section we discuss a new phenomenon emerging from the main topic of this review, namely, the possibility to modify the PMA at transition metal/oxide interfaces by applying an electric field. This phenomenon often called voltage control of magnetic anisotropy (VCMA) has attracted considerable interest from both scientists and engineers since it represents a viable alternative to energy-demanding magnetic field-and/or STT-controlled magnetization switching in spintronic devices and paves the way to the latter with ultralow-power consumption [see, for example, Wang, Lee, and Amiri (2015) and Lin et al (2016)].…”

Section: Voltage Control Of the Anisotropy And Applications In Lowmentioning

confidence: 99%

Perpendicular magnetic anisotropy at transition metal/oxide interfaces and applications

2017

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International audienceSpin electronics is a rapidly expanding field stimulated by a strong synergy between breakthrough basic research discoveries and industrial applications in the fields of magnetic recording, magnetic field sensors, nonvolatile memories [magnetic random access memories (MRAM) and especially spin-transfer-torque MRAM (STT-MRAM)]. In addition to the discovery of several physical phenomena (giant magnetoresistance, tunnel magnetoresistance, spin-transfer torque, spin-orbit torque, spin Hall effect, spin Seebeck effect, etc.), outstanding progress has been made on the growth and nanopatterning of magnetic multilayered films and nanostructures in which these phenomena are observed. Magnetic anisotropy is usually observed in materials that have large spin-orbit interactions. However, in 2002 perpendicular magnetic anisotropy (PMA) was discovered to exist at magneticmetal/oxide interfaces [for instance Co(Fe)/alumina]. Surprisingly, this PMA is observed in systems where spin-orbit interactions are quite weak, but its amplitude is remarkably large—comparable to that measured at Co/Pt interfaces, a reference for large interfacial anisotropy (anisotropy ∼1.4 erg/cm2 = 1.4 mJ/m2). Actually, this PMA was found to be very common at magnetic metal/oxide interfaces since it has been observed with a large variety of amorphous or crystalline oxides, including AlOx, MgO, TaOx, HfOx, etc. This PMA is thought to be the result of electronic hybridization between the oxygen and the magnetic transition metal orbit across the interface, a hypothesis supported by ab initio calculations. Interest in this phenomenon was sparked in 2010 when it was demonstrated that the PMA at magnetic transition metal/oxide interfaces could be used to build out-of-plane magnetized magnetic tunnel junctions for STT-MRAM cells. In these systems, the PMA at the CoFeB/MgO interface can be used to simultaneously obtain good memory retention, thanks to the large PMA amplitude, and a low write current, thanks to a relatively weak Gilbert damping. These two requirements for memories tend to be difficult to reconcile since they rely on the same spin-orbit coupling. PMA-based approaches have now become ubiquitous in the designs for perpendicular STT-MRAM, and major microelectronics companies are actively working on their development with the first goal of addressing embedded FLASH and static random access memory-type of applications. Scalability of STT-MRAM devices based on this interfacial PMA is expected to soon exceed the 20-nm nodes. Several very active new fields of research also rely on interfacial PMA at magnetic metal/oxide interfaces, including spin-orbit torques associated with Rashba or spin Hall effects, record high speed domain wall propagation in buffer/magnetic metal/oxide-based magnetic wires, and voltage-based control of anisotropy. This review deals with PMA at magnetic metal/oxide interfaces from its discovery, by examining the diversity of systems in which it has been observed and the physicochemical methods through which the ...

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Universal domain wall dynamics under electric field in Ta/CoFeB/MgO devices with perpendicular anisotropy

Cited by 44 publications

References 39 publications

Electric field control of magnetic domain wall motion via modulation of the Dzyaloshinskii-Moriya interaction

Electric field control of magnetic domain wall motion via modulation of the Dzyaloshinskii-Moriya interaction

Skyrmions in magnetic multilayers

Perpendicular magnetic anisotropy at transition metal/oxide interfaces and applications

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