The formation of soap bubbles from thin films is accompanied by topological transitions. Here we show how a magnetic topological structure, a skyrmion bubble, can be generated in a solid-state system in a similar manner. Using an inhomogeneous in-plane current in a system with broken inversion symmetry, we experimentally "blow" magnetic skyrmion bubbles from a geometrical constriction. The presence of a spatially divergent spin-orbit torque gives rise to instabilities of the magnetic domain structures that are reminiscent of Rayleigh-Plateau instabilities in fluid flows. We determine a phase diagram for skyrmion formation and reveal the efficient manipulation of these dynamically created skyrmions, including depinning and motion. The demonstrated current-driven transformation from stripe domains to magnetic skyrmion bubbles could lead to progress in skyrmion-based spintronics.

The well-known Hall effect describes the transverse deflection of charged particles (electrons/holes) in an electric-current carrying conductor under the influence of perpendicular magnetic fields, as a result of the Lorentz force. Similarly, it is intriguing to examine if quasi-particles without an electric charge, but with a topological charge 1-4 , show related transverse motion. Chiral magnetic skyrmions with a well-defined spin topology resulting in a unit topological charge serve as good candidates to test this hypothesis 1-3,5-11 . In spite of the recent progress made on investigating magnetic skyrmions 2,4,6-8,12-19 , direct observation of the skyrmion Hall effect in real space has, remained elusive. Here, by using a current-induced spin Hall spin torque 13,20-23 , we experimentally observe the skyrmion Hall effect by driving skyrmions from creep motion into the steady flow motion regime. We observe a Hall angle for the magnetic skyrmion motion as large as 𝟏𝟓 ∘ for current densities smaller than 𝟏𝟎 𝟕 𝐀/𝐜𝐦 𝟐 at room temperature. The experimental observation of transverse transport of skyrmions due to topological charge may potentially create many exciting opportunities for the emerging field of skyrmionics, including novel applications such as topological selection.Because of their topologically non-trivial spin textures, chiral magnetic skyrmions enable many intriguing phenomena based on their topology 2-4 , such as emergent electrodynamics 10 and effective magnetic monopoles 11 . As compared to most (vortex-like) Bloch skyrmions in bulk chiral materials 2,5,9 , utilizing interfacial inversion symmetry breaking 24 in heavy metal/ultrathin ferromagnet/insulator hetero-structures has enabled

Recent demonstrations of magnetization switching induced by in-plane current in heavy metal/ferromagnetic heterostructures (HMFHs) have drawn great attention to spin torques arising from large spin-orbit coupling (SOC). Given the intrinsic strong SOC, topological insulators (TIs) are expected to be promising candidates for exploring spin-orbit torque (SOT)-related physics. Here we demonstrate experimentally the magnetization switching through giant SOT induced by an in-plane current in a chromium-doped TI bilayer heterostructure. The critical current density required for switching is below 8.9 × 10(4) A cm(-2) at 1.9 K. Moreover, the SOT is calibrated by measuring the effective spin-orbit field using second-harmonic methods. The effective field to current ratio and the spin-Hall angle tangent are almost three orders of magnitude larger than those reported for HMFHs. The giant SOT and efficient current-induced magnetization switching exhibited by the bilayer heterostructure may lead to innovative spintronics applications such as ultralow power dissipation memory and logic devices.

Breaking of structural symmetries of nanomagnetic systems is of great interest for the development of ultralow-power spintronic devices. The structural asymmetry in various magnetic heterostructures has been engineered to reveal novel fundamental interactions between electric currents and magnetization, resulting in spin-orbit-torques (SOTs) on the magnetization [1][2][3][4][5][6] , which are both fundamentally important and technologically promising for device applications. Such SOTs have been used to realize current-induced magnetization switching [2][3][4]7 and domain-wall 3 motion [8][9][10] in recent experiments. Typical heterostructures exhibiting SOTs consist of a ferromagnet (F) with a heavy nonmagnetic metal (NM) having strong spin-orbit coupling on one side, and an insulator (I) on the other side (referred to as NM/F/I structures, shown schematically in Fig. 1a, which break mirror symmetry in the growth direction). In terms of device applications, the use of SOTs in NM/F/I structures allows for a significantly lower write current compared to regular spin-transfer-torque (STT) devices 4 . It can greatly improve energy efficiency and scalability [1][2][3][4][5]11 for new SOT-based devices such as magnetic random access memory (SOT-MRAM), going beyond state-of-the-art STT-MRAM.For practical applications, a critical requirement to achieve high-density SOT memory is the ability to perform SOT-induced switching without the use of external magnetic fields, in particular for perpendicularly-magnetized ferromagnets, which show better scalability and thermal stability as compared to the in-plane case 12 .However, there are currently no practical solutions that meet this requirement. In NM/F/I heterostructures studied so far, the form of the resultant current-induced SOT alone does not allow for deterministic switching of a perpendicular ferromagnet, requiring application of an additional external in-plane magnetic field to switch the perpendicular magnetization [2][3][4] . (This is a very general feature of SOT devices, which can be explained by symmetry-based arguments, as discussed below). In such experiments, the external field allows for each current direction to favor a particular orientation for the out-of-plane component of magnetization, thereby resulting in deterministic perpendicular switching. However, this external field is undesirable 4 from a practical point of view. For device applications, it also reduces the thermal stability of the perpendicular magnet by lowering the zero-current energy barrier between the stable perpendicular states, resulting in a shorter retention time if used for memory.This work provides a solution to eliminate the use of external magnetic fields, bringing SOT-based spintronic devices such as SOT-MRAM closer to practical application. We present a new NM/F/I structure, which provides a novel spin-orbit torque, resulting in zero-field current-induced switching of perpendicular magnetization. Our device consists of a stack of Ta/Co 20 Fe 60 B 20 /TaO x layers, but also has a...

Symmetry breaking together with strong spin-orbit interaction give rise to many exciting phenomena within condensed matter physics. A recent example is the existence of chiral spin textures, which are observed in magnetic systems lacking inversion symmetry. These chiral spin textures, including domain walls and magnetic skyrmions, are both fundamentally interesting and technologically promising. For example, they can be driven very efficiently by electrical currents, and exhibit many new physical properties determined by their real-space topological characteristics. Depending on the details of the competing interactions, these spin textures exist in different parameter spaces. However, the governing mechanism underlying their physical behaviors remain essentially the same. In this review article, the fundamental topological physics underlying these chiral spin textures, the key factors for materials optimization, and current developments and future challenges will be discussed. In the end, a few promising directions that will advance the development of skyrmion based spintronics will be highlighted.This review article is organized as follows:1. Topological physics of magnetic skyrmions 1.1 Origin of spin topology 1.2 Real space topological physics 1.3 Topological distinction of bubble-like spin textures 2. Interfacial chiral magnetism 2.1 From spin spiral to chiral domain wall 2.2 Physical origin of the chiral interfacial DMI 2.3 Measurement of the interfacial DMI 2.4 Unique advantages of magnetic skyrmions in heterostructures 3. Current developments in thin-film skyrmions 3.1 Writing and deleting a single skyrmion 3.2 Blowing magnetic skyrmion bubbles 3.3 Moving skyrmions in wires 3.4 Magnetic skyrmions in asymmetric trilayers 3.5 Characteristics of topological trivial bubbles 3.6 Hall effect of topological charge -skyrmion Hall effect 3.7 High frequency dynamics of magnetic skyrmion 3.8 Artificial skyrmions stabilized by interlayer coupling in thin films 3.9 Novel spin-resolved imaging techniques 3.9.1 Lorentz transmission electron microscopy 3.9.2 Spin-polarized low energy electron microscopy 3.9.3 Photoemission electron microscopy 4. PerspectivesRecent advancements in nanotechnology resulted in concomitant progress in magnetism, with two developments being particularly influential in nanomagnetic systems: controlling magnets via electric (field/current) excitations [5][6][7][8] and the discovery of topological spin textures [9]. Electric control of magnetism is made possible by utilizing the coupling between electron spin and its orbital motion.

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We investigate the current-induced switching of the Néel order in NiO(001)/Pt heterostructures, which is manifested electrically via the spin Hall magnetoresistance. Significant reversible changes in the longitudinal and transverse resistances are found at room temperature for a current threshold lying in the range of 10^{7}  A/cm^{2}. The order-parameter switching is ascribed to the antiferromagnetic dynamics triggered by the (current-induced) antidamping torque, which orients the Néel order towards the direction of the writing current. This is in stark contrast to the case of antiferromagnets such as Mn_{2}Au and CuMnAs, where fieldlike torques induced by the Edelstein effect drive the Néel switching, therefore resulting in an orthogonal alignment between the Néel order and the writing current. Our findings can be readily generalized to other biaxial antiferromagnets, providing broad opportunities for all-electrical writing and readout in antiferromagnetic spintronics.

Magnetic skyrmions are intensively explored for potential applications in ultralow-energy data storage and computing. To create practical skyrmionic memory devices, it is necessary to electrically create and manipulate these topologically protected information carriers in thin films, thus realizing both writing and addressing functions. Although room-temperature skyrmions have been previously observed, fully electrically controllable skyrmionic memory devices, integrating both of these functions, have not been developed to date. Here, we demonstrate a room-temperature skyrmion shift memory device, where individual skyrmions are controllably generated and shifted using current-induced spin-orbit torques. Particularly, it is shown that one can select the device operation mode in between (i) writing new single skyrmions or (ii) shifting existing skyrmions by controlling the magnitude and duration of current pulses. Thus, we electrically realize both writing and addressing of a stream of skyrmions in the device. This prototype demonstration brings skyrmions closer to real-world computing applications.