Nonvolatile Ionic Modification of the Dzyaloshinskii-Moriya Interaction

Diez, L. Herrera; Liu, Yuting; Gilbert, Dustin A.; Belmeguenai, M.; Vogel, Jan; Pizzini, S.; Martínez, Eduardo; Lamperti, Alessio; Mohammedi, J. B.; Laborieux, Axel; Roussigné, Y.; Grutter, Alexander J.; Arenholtz, Elke; Quarterman, Patrick; Maranville, Brian B.; Ono, Shimpei; Hadri, Mohammed Salah El; Tolley, Robert; Fullerton, Eric E.; Sánchez-Tejerina, Luis; Stashkevich, A.A.; Chérif, S. M.; Kent, Andrew D.; Querlioz, Damien; Langer, J.; Ocker, B.; Ravelosona, D.

doi:10.1103/physrevapplied.12.034005

Cited by 72 publications

(56 citation statements)

References 45 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…This is consistent with previous reports in the literature where the effect of interface roughness and intermixing on the inversion symmetry breaking has been extensively studied. It was reported that the DMI and the domain wall velocity increased with the difference of roughness and intermixing between the top and bottom interface of a magnetic layer 39,40,44,45 . Finally, as the skyrmion size depends on the magnetic film thickness 22,34 , it is thus important to understand how the interfacial DMI scales with the thickness.…”

Section: Resultsmentioning

confidence: 99%

Tuning interfacial Dzyaloshinskii-Moriya interactions in thin amorphous ferrimagnetic alloys

Quessab¹,

Xu²,

T.³

et al. 2020

Sci Rep

View full text Add to dashboard Cite

Skyrmions can be stabilized in magnetic systems with broken inversion symmetry and chiral interactions, such as Dzyaloshinskii-Moriya interactions (DMi). further, compensation of magnetic moments in ferrimagnetic materials can significantly reduce magnetic dipolar interactions, which tend to favor large skyrmions. tuning DMi is essential to control skyrmion properties, with symmetry breaking at interfaces offering the greatest flexibility. However, in contrast to the ferromagnet case, few studies have investigated interfacial DMi in ferrimagnets. Here we present a systematic study of DMI in ferrimagnetic CoGd films by Brillouin light scattering. We demonstrate the ability to control DMI by the coGd cap layer composition, the stack symmetry and the ferrimagnetic layer thickness. the DMi thickness dependence confirms its interfacial nature. In addition, magnetic force microscopy reveals the ability to tune DMI in a range that stabilizes sub-100 nm skyrmions at room temperature in zero field. our work opens new paths for controlling interfacial DMi in ferrimagnets to nucleate and manipulate skyrmions. Magnetic skyrmions due to their non-trivial topology have interesting properties 1-3 that make them attractive for spintronic applications, such as racetrack memory and logic devices 4-6. A magnetic skyrmion designates a chiral spin texture with a whirling spin configuration 7. Skyrmions can be stabilized by broken inversion symmetry and chiral interactions, such as the Dzyaloshinskii-Moriya interactions (DMI) 8,9 , which is an antisymmetric exchange interaction that favors non-collinear neighboring spins. Ultrathin magnetic materials with interfaces to heavy non-magnetic metals with large spin-orbit coupling exhibit interfacial DMI that stabilizes skyrmions and chiral domain walls 10-13. The interfacial DMI and the nucleation of skyrmions have been extensively investigated in ferromagnetic materials 10,14-18. Very recently, magnetic skyrmions and chiral domains were reported in ferrimagnetic systems 19-21. Nearly compensated thin ferrimagnetic films with interfacial DMI are interesting materials due to their low stray fields, reduced sensitivity to external magnetic fields, and fast spin dynamics, which are predicted to lead to ultrasmall and ultrafast skyrmions 19,22. Unlike in ferromagnets where fast current-induced motion of chiral textures is impeded by the Walker breakdown and domain wall pinning 13,23-25 , high domain wall velocities-reaching 1000 m s-1-have been observed in ferrimagnetic CoGd films near the angular momentum compensation temperature 19. In addition, the large dipolar fields in ferromagnets are obstacles to the formation of ultrasmall skyrmion 22. Hence, ferrimagnetic thin films are promising candidates for ultrafast skyrmion-based spintronics. Recently, bulk DMI was reported in an amorphous ferrimagnetic GdFeCo alloy 26. However, the significant advantages of interfacial DMI are that it can be controlled by the nature of the interfaces and widely tuned to stabilize skyrmions. Yet, interfacial DM...

show abstract

Section: Resultsmentioning

confidence: 99%

Tuning interfacial Dzyaloshinskii-Moriya interactions in thin amorphous ferrimagnetic alloys

Quessab¹,

Xu²,

T.³

et al. 2020

Sci Rep

View full text Add to dashboard Cite

show abstract

“…In contrast to electric-field gating, electric-field-induced strains in the ferroelectric can be transferred to the FM layer over hundreds of nanometers 26 or more, which should lead to a more effective skyrmion manipulation by modulating both the magnetic anisotropy and the interfacial DMI of the HM/FM interface. Notably, electric-field control of the interfacial DMI of the HM/FM interface has so far only been observed through ionic-liquid-gating-induced carrier density change 27 , and the ionic-liquid may damage the sample. Instead, a nondestructive HM/FM interfacial DMI modulation could be achieved via the strain-mediated electric-field control in all-solid-state heterostructures/devices.…”

Section: Introductionmentioning

confidence: 99%

Electric-field control of skyrmions in multiferroic heterostructure via magnetoelectric coupling

et al. 2021

View full text Add to dashboard Cite

Room-temperature skyrmions in magnetic multilayers are considered to be promising candidates for the next-generation spintronic devices. Several approaches have been developed to control skyrmions, but they either cause significant heat dissipation or require ultrahigh electric fields near the breakdown threshold. Here, we demonstrate electric-field control of skyrmions through strain-mediated magnetoelectric coupling in ferromagnetic/ferroelectric multiferroic heterostructures. We show the process of non-volatile creation of multiple skyrmions, reversible deformation and annihilation of a single skyrmion by performing magnetic force microscopy with in situ electric fields. Strain-induced changes in perpendicular magnetic anisotropy and interfacial Dzyaloshinskii–Moriya interaction strength are characterized experimentally. These experimental results, together with micromagnetic simulations, demonstrate that strain-mediated magnetoelectric coupling (via strain-induced changes in both the perpendicular magnetic anisotropy and interfacial Dzyaloshinskii–Moriya interaction is responsible for the observed electric-field control of skyrmions. Our work provides a platform to investigate electric-field control of skyrmions in multiferroic heterostructures and paves the way towards more energy-efficient skyrmion-based spintronics.

show abstract

“…[3,12,14,19,20] To date, studies on magnetoionic effects in thin metal films have focused primarily on changes in the interfaceperpendicular magnetic anisotropy (PMA) [21][22][23][24][25] and the Dzyaloshinskii-Moriya interaction. [26] There is growing recognition that voltageinduced changes in valency and phase, inherent to magnetoionic effects, can be applied to the magnetic layer beyond the interface. [13,17] For instance, voltagecontrol of magnetization up to ON/OFF switching of magnetism is possible in transition metal oxide (TMO) [13,27] and hybrid TMO/metal films [28][29][30] because of the switching between different chemical states induced by oxygen, hydrogen, or lithiumion transport.…”

Section: Introductionmentioning

confidence: 99%

“…Since the magnetization processes rely on the evolution of magnetic domains, the local magnetic microstructure is a decisive tool for understanding magneto ionic effects. Until now, the modulation of domain expan sion, [12,26] domain contrast, [25] and domain size [40] after ionic modification of thin films have been reported. However, there have been no reports of the direct and simultaneous detection of electrochemical oxidation/reduction reactions and changes in the magnetic domain structure.…”

Section: Introductionmentioning

confidence: 99%

Voltage‐Controlled Deblocking of Magnetization Reversal in Thin Films by Tunable Domain Wall Interactions and Pinning Sites

Zehner

Soldatov

Schneider

et al. 2020

Adv Elect Materials

View full text Add to dashboard Cite

so far, mainly originates from the elec tric currents utilized to control the mag netic properties. A promising alternative for increasing the energy efficiency of magnetic devices is to control the mag netism by electric fields instead of electric currents. This possibility has triggered intense research into magnetoelectric materials, but much of this is restricted to low temperature and high voltage opera tion and/or complex layer synthesis. [1] More recently, magnetoelectric appro aches involving the voltagegating of mag netic nanostructures via a dielectric oxide or an electrolyte were examined. [1-3] In these approaches, ferro and ferrimagnetic metals or oxides exhibiting Curie tem peratures above room temperature can be used and often only few volts are required during gating. The modulation of mag netic properties in voltagegated magnetic nanostructures is based on either voltage induced capacitive charging or electro chemical (magnetoionic) processes. [2-4] Voltageinduced capacitive charging of a ferromagnetic metal interface causes volatile changes in the sur face electronic band structure that affect the intrinsic magnetic properties in just a few atomic layers. [5-10] In contrast, magneto ionic mechanisms involve voltageinduced ion migration and electrochemical reactions, [2,3,11-13] and can therefore induce very large and nonvolatile magnetic property changes. [12,14-18] As a High energy efficiency of magnetic devices is crucial for applications such as data storage, computation, and actuation. Redox-based (magneto-ionic) voltage control of magnetism is a promising room-temperature pathway to improve energy efficiency. However, for ferromagnetic metals, the magnetoionic effects studied so far require ultrathin films with tunable perpendicular magnetic anisotropy or nanoporous structures for appreciable effects. This paper reports a fully reversible, low voltage-induced collapse of coercivity and remanence by redox reactions in iron oxide/iron films with uniaxial in-plane anisotropy. In the initial iron oxide/iron films, Néel wall interactions stabilize a blocked state with high coercivity. During the voltage-triggered reduction of the iron oxide layer, in situ Kerr microscopy reveals inverse changes of coercivity and anisotropy, and a coarsening of the magnetic microstructure. These results confirm a magneto-ionic deblocking mechanism, which relies on changes of the Néel wall interactions, and of the microstructural domainwall-pinning sites. With this approach, voltage-controlled 180° magnetization switching with high energy-efficiency is achieved. It opens up possibilities for developing magnetic devices programmable by ultralow power and for the reversible tuning of defect-controlled materials in general.

show abstract

Nonvolatile Ionic Modification of the Dzyaloshinskii-Moriya Interaction

Cited by 72 publications

References 45 publications

Tuning interfacial Dzyaloshinskii-Moriya interactions in thin amorphous ferrimagnetic alloys

Tuning interfacial Dzyaloshinskii-Moriya interactions in thin amorphous ferrimagnetic alloys

Electric-field control of skyrmions in multiferroic heterostructure via magnetoelectric coupling

Voltage‐Controlled Deblocking of Magnetization Reversal in Thin Films by Tunable Domain Wall Interactions and Pinning Sites

Contact Info

Product

Resources

About