Hall effect measurements are described on heat treated and quenched p-type silicon crystals. Donor centres appear a t ( E , + 0.37) eV after this treatment. Introduction and annealing studies indicate that these centres are vacancy clusters. Similar investigations are made on electron irradiated samples.Halleffektmessungen an thermisch behandelten p-leitenden Siliziumkristallen werden beschrieben. Die dabei entstehenden Donatorzentren bei ( E , + 0,37) eV werden im Zusammenhang mit Alterungsuntersuchungen als Leerstellenkomplex gedeutet. Vergleichende Untersuchungen an mit Elektronen bestrahlten Proben werden diskutiert.
The junction properties of isotype and anisotype n+-ZnO/c-Si heterostructures have been studied by electrical and photoelectrical methods. We present evidence that the junction properties are strongly affected by a 10–30 nm thick ZnO layer closest to the heterointerface with distinctively different properties than those of the ZnO film bulk. This layer supports a dominant current flow via multistep tunnelling-recombination. When a 10 nm thin ZnS or ZnSe interlayer is inserted charge transport is controlled by thermionic emission. The interlayer acts as spacer and increases the band bending in the silicon absorber. However, there is still a too high trap density at the interlayer/c-Si interface, so that Voc does not exceed 0.25–0.32 V.
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