Quenched‐in Levels in p‐Type Silicon

Elstner, L.; Kamprath, W.

doi:10.1002/pssb.19670220227

Cited by 73 publications

(15 citation statements)

References 13 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…The quenching experiments of Elstr}er and Kamprath (11) indicate that an energy level exists at Ev + 0.37 eV associated with donor-type complexes in ptype Si samples. The effect of vacancy association should shift the ionization energy of the donor level by only a small amount.…”

Section: Discussionmentioning

confidence: 97%

Diffusion of Ion‐Implanted B in High Concentration P‐ and As‐Doped Silicon

Fair¹,

Pappas²

1975

J. Electrochem. Soc.

View full text Add to dashboard Cite

The diffusion of ion-implanted B in Si in the presence of a uniform background of high concentration P or As has been studied by correlating, numerical profile calculations with profiles determined by secondary-ion mass spectrometry (SIMS). Retarded B diffusion is observed in both As-and P-doped Si, consistent with the effect of the local Fermi-level position in the Si bandgap on B diffusivity, DB. It is shown that DB is linearly dependent on the free hole concentration, p, over the range 0.1 < P/nie < 30, where nie is the effective intrinsic electron concentration. This result does not depend on the way in which the background dopant has been introduced (implantation predeposition or doped-oxiae source), nor the type of dopant used (P or As).In earlier papers (1, 2) the theory was discussed that the diffusion of B in Si is controlled by donor-type monovacancies. This model predicts that the diffusivity of B increases linearly with B concentration for CB > nj when the concentration of n-type dopants, CN, is << hi. The combined observations of many workers verify this fact. It has also been demonstrated (2) that the diffusivity of B in uniform As-doped Si (CN ~ 1.5 • 1020 cm -3) is retarded approximately linearly with the decrease in the normalized hole concentration, p/ni, also predicted by the donor-type m0novacancy model. Some ambiguity may exist in interpreting these results, since the retarded diffusion of B in Si in the presence of a diffusing As layer has been attributed to other effects (3, 4). Therefore, additional data have been obtained by implanting and diffusing B into uniform P-and As-doped Si layers. Retarded B diffusion in both P-and As-doped Si has been observed, consist ~ ent with the theory of a Fermi-level-controlled concentration of donor-type vacancies which directly affect B diffusivity. The significance of this result is that transistor modeling programs must take this first-order effect into account, since the diffusion of B in the preSence of n-type dopants is invariably encountered. Examples of numerically calculated B diffusion profiles in n-type Si are presented in which the local diffusivity is determined from the local hole concentration, p. Heavy-doping effects (5) ' on the Fermi-level calculation are included. These calculations are compared with experimental profiles obtained by secondary-ion mass spectrometry (SIMS) analysis. ExperimentalIon-implantation and doped-oxide source diffusions were both used to introduce P and As into Si slices. Silicon slices [(100) orientation, 1 ohm-cm, p-type] were implanted with 5 X 1015 cm -2, 50 keV P, and then were diffused at 1050~ for 45 min in a N2/O2 ambient. In other slices, arsenic implantations were performed (5 X 1015 cm-2, 50 keV), and these samples were diffused at 1050~ for 2 hr, also in N2/O2. In both cases, ,-~600A of SiO2 grew on the Si surface, which was retained through the subsequent B implantation. P-and As-doped oxide depositions were performed on another group of Si slices, and diffusions were performed in 02 at 1050~ for 2 ...

show abstract

Section: Discussionmentioning

confidence: 97%

Diffusion of Ion‐Implanted B in High Concentration P‐ and As‐Doped Silicon

Fair¹,

Pappas²

1975

J. Electrochem. Soc.

View full text Add to dashboard Cite

show abstract

“…Hall measurements would have been necessary for determining the TID 2 concentration, as with [7], but were not carried out. I n these cases, TID's 1 could not be detected, in accordance with [7]. I n contrast to [7], the conduction type was changed in B-doped silicon of about lo3 Qcm after quenching according to Q 1 from T, 2 973 K, with strongly reducing the resistivity.…”

Section: Some Further Resultsmentioning

confidence: 49%

“…2b). The straight lines have been taken from [7], corresponding largely to the maximum solubility of iron in silicon [20]. The different effects of Q 1 and Q 3 can clearly be seen.…”

Section: Defects ( T I D 1) Annihilated Aftel 2 H Of 125 'C Annealingmentioning

confidence: 99%

The distinction of different kinds of thermally induced defects in silicon

Reichel¹

1983

Phys. Stat. Sol. (a)

View full text Add to dashboard Cite

While thermally induced defects (TID) caused by the action of iron show a formation energy of E = 2.9 eV, TID's annihilating a t room temperature has a formation energy of E = (1.2 f 0.2) eV. Corresponding resist,ivity measurements with p-type Si of 0.1 to 10 Rcm were carried out after quenching. The boron concentration being the upper limit for the formation, pair formation of boron with vacancies or Si self-interstitials is supposed to be the reason. Some peculiarities in the behaviour led to a better understanding of oxygen donors.Neben den thermisch induzierten Defekten (TID) mit einer Bildungsenergie von E = 2,9 eV, welche auf die Wirkung von Eisen zuriickgefuhrt werden, ergeben die bereits bei Raumtemperatur ausheilenden TID eine Bildungsenergie von E = (1,2 5 0,2) eV. Dazu werden Messungen des spezifischen Widerstandes an p-Si von 0,l bis 10 Rcm nach Abschrecken durchgefiihrt. Da die Borkonzentration eine obere Grenze fur die Bildung darstellt, wird eine Paarbildung von Bor mit Leerstellen oder Si-Eigenzwischengitteratomen als Ursache angenommen. Einige Besonderheiten im Verhalten liefern auch Anregungen zum Verstandnis von Sauerstoffdonatoren.

show abstract

“…9,10,18 The formation kinetics of CoSi induced by heating is controlled by the diffusion of silicon atoms, and the activation energy ͑1.7-1.9 eV͒ corresponds to the formation energy of vacancy-interstitial pairs ͑2-3 eV͒ in silicon crystals, because the migration energy of interstitial silicon atoms is much smaller than the formation energy. [19][20][21] For the case of irradiation, the energy for production of vacancyinterstitial pairs is supplied by the irradiation, and plenty of interstitials are produced, which is similar to the situation for thermal processing at high temperature. Thus, the silicidation proceeds with such a small activation energy as E a ϭ0.16 eV.…”

Section: Resultsmentioning

confidence: 95%