Utilizing microwave continuous-wave Doppler radars to wirelessly detect mechanical vibrations have been attracting more and more interests in recent years. In this paper, aiming to solve the null point and nonlinear issues in small-angle approximation-based Doppler radar sensors and eliminate the codomain restriction in the arctangent demodulation approach, we propose and investigate an extended differentiate and crossmultiply (DACM) algorithm. With an additional accumulator, the noise performance of the original DACM algorithm is improved. Moreover, the amplitude information of the vibration can be directly retrieved from accumulation without involving any distance-dependent issue. Experimental validations show that the proposed algorithm can fully recover the vibration patterns with the measured noncalibrated amplitude agreeing well with the known precalibrated data. Application examples of mechanical fault detection and human vital sign detection are demonstrated, showing a wide range of potential applications of this algorithm.Index Terms-Arctangent demodulation, differentiate and cross multiply (DACM), noncontact vibration measurement, nonlinear phase modulation, radar sensor.

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In this work, we investigate the temperature-dependent thermal conductivities of few nanometer thick alternating stacks of amorphous dielectrics, specifically SiO2/Al2O3 and SiO2/Si3N4. Experiments using steady-state Joule-heating and electrical thermometry, while using a micro-miniature refrigerator over a wide temperature range (100–500 K), show that amorphous thin-film multilayer SiO2/Si3N4 and SiO2/Al2O3 exhibit through-plane room temperature effective thermal conductivities of about 1.14 and 0.48 W/(m × K), respectively. In the case of SiO2/Al2O3, the reduced conductivity is attributed to lowered film density (7.03 → 5.44 × 1028 m–3 for SiO2 and 10.2 → 8.27 × 1028 m–3 for Al2O3) caused by atomic layer deposition of thin-films as well as a small, finite, and repeating thermal boundary resistance (TBR) of 1.5 m2 K/GW between dielectric layers. Molecular dynamics simulations reveal that vibrational mismatch between amorphous oxide layers is small, and that the TBR between layers is largely due to imperfect interfaces. Finally, the impact of using this multilayer dielectric in a dash-type phase-change memory device is studied using finite-element simulations.

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