Excimer laser is used for back channel etched (BCE) a-Si TFT fabrication for the first time. KrF laser could easily and successfully lift-off ITO on photo-resist comparing to traditional chemical lift-off process. Besides, this maskless laser lift-off technology could save much process time from mask alignment step. The mechanism of laser assisted ITO lift-off (LAIL) technology was carefully studied in this paper. With suitable laser fluence energy, ITO could be precisely patterned as designed. Very wide range of laser fluence energy was obtained in our LAIL technology. TFT device fabricated by LAIL technology exhibits the same electrical characteristics performance as traditional non-lift-off one.
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