P‐3: Laser Assisted ITO Lift‐off for TFT Fabrication

Fang, Kuo-Lung; Huang, Ming-Yang; Yang, Chao‐Hsun; Liao, Chin-Yueh; Jan, Shiun-Chang; Lin, Han-Tu; Chen, Chien‐Hung; Gan, Fengyuan

doi:10.1889/1.2785258

Cited by 2 publications

(2 citation statements)

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“…3 With an extra quick KrF excimer-laser pulse scanning of the entire TFT glass substrate before chemical stripping, almost all of the ITO film on the P/R surface could be easily lift-off due to the P/R decomposition into gas phase. 3 And the ITO on SiN x , glass and metal pad could still remain due to the larger adhesion force between the ITO and SiN x , ITO, and glass, or ITO to pad metal. The minimum threshold scanning energy to liftoff ITO on P/R is smaller than that to lift-off ITO from other material substrates.…”

Section: Laser-assisted Ito Lift-off (Lail)mentioning

confidence: 99%

“…1 The ITO lift-off technique was recently integrated into a TFT fabrication process to further reduce the photolithography process. 2,3 Through the use of a new pixel structure redesign and by combining the ITO lift-off technology and the SiN x passivation process, we could reduce the two photolithography processes into one. However, compared to the conventional chemical lift-off process, we have to create a reverse-taper structure of a photo-developed P/R such that the P/R stripper could react at this undercutting region to lift-off ITO.…”

Section: Introductionmentioning

confidence: 99%

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ITO lift‐off technique for TFT mask‐reduction process

Fang¹,

Lin²,

Chen³

2009

J Soc Info Display

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Abstract— In recent years, reducing the number of TFT‐manufacturing steps has become an unavoidable technology development stream for all TFT‐LCD makers for the purpose of cost reduction. In this paper, an advanced photomask‐process‐reduction technique, a three‐mask TFT process, by chemical lift‐off which is inherent of the conventional four‐mask TFT fabrication process, is proposed. The major feature of this three‐mask technique is the combining of the passivation‐layer and pixel‐electrode formation within one photolithography process. A new halftone mask (HTM) design has been applied to the photolithography process. With this new HTM design, a small SiNx island bridge was formed, located at the TFT source contact‐edge border. And it provided an ITO pixel electrical conducting path and avoided the undercut issue where ITO breaks from the gate insulator (GI). In order to enhance the chemical lift‐off efficiency, different process and structure designs were also implemented and introduced. Furthermore, a new laser lift‐off technology was adopted to improve the ability of ITO lift‐off. By using this new laser lift‐off technology, unnecessary ITO film could be easily lift‐off before photoresist stripping. Finally, the first HTM lift‐off panel was successfully demonstrated by using our new three‐mask TFT design scheme.

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Section: Laser-assisted Ito Lift-off (Lail)mentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

ITO lift‐off technique for TFT mask‐reduction process

Fang¹,

Lin²,

Chen³

2009

J Soc Info Display

Self Cite

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24.1: 3‐Masks TFT Process by Using ITO Lift‐Off Technique

Fang

Yang

Liao

et al. 2008

Symp Digest of Tech Papers

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Reducing TFT manufacturing steps in recent years has become an unavoidable technology trend for many TFT‐ LCD makers in order of cost reduction purpose. Here, we proposed a new mask reduction process (3‐masks TFT) by chemical lift‐off which based on conventional 4‐masks TFT fabrication process. The major spirit of 3‐masks technique combines passivation layer and pixel electrode formed in one photolithography process with HTM (Half tone mask). with this new HTM design, a small SiNx island cross TFT source contact edge border could be created to provide a pixel electrode conducting path away from electrical signal opening. In order to enhance to lift‐off ability, new optional extra lift‐off enhancement designs could be adopted to improve chemical lift‐off efficiency. Through the development of process and design of TFTs using 3‐masks HTM lift‐off scheme, one first 1.8″ HTM lift‐off panel was demonstrated which exhibits same performance of conventional fabricated one.

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P‐3: Laser Assisted ITO Lift‐off for TFT Fabrication

Cited by 2 publications

References 0 publications

ITO lift‐off technique for TFT mask‐reduction process

ITO lift‐off technique for TFT mask‐reduction process

24.1: 3‐Masks TFT Process by Using ITO Lift‐Off Technique

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