Abstract-This paper introduces an Ultra Thin Body Silicon Over Insulator Tunneling Field Effect Transistor structure, which shows excellent device characteristics using a CMOS compatible fabrication process. This fabricated TFET structure shows ≤40 mV Sub-threshold Swing (SS), on-state/ off-state current ratio ≥108 and a scaled down Supply Voltage 0.6 Volt at 32nm gate length. The work also includes a detail design parameters study on the on-state/ off-state current ratio and sub-threshold swing. The result is particularly promising for low-power application of the device.
IndexTerms-SOITFET, UTBTFET, band-to-band tunnelling, sub-threshold swing, TCAD.
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