A Device Simulation-Based Investigation on Dielectrically Modulated Fringing Field-Effect Transistor for Biosensing Applications

Kanungo, Sayan; Chattopadhyay, Sanatan; Sinha, Kunal; Gupta, Partha Sarathi; Rahaman, Hafizur

doi:10.1109/jsen.2016.2633621

Cited by 21 publications

(13 citation statements)

References 27 publications

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“…Sensitivity is a key factor to consider when evaluating a biosensor’s performance. It is determined by the ratio between the drain currents in the presence and absence of biomolecules in relation to the air medium as shown in eq S e n s i t i v i t y = I d r a i n .25em ( b i o ) − I d r a i n .25em ( a i r ) I normald normalr normala normali normaln false( normala normali normalr false) …”

Section: Resultsmentioning

confidence: 79%

Section: Resultsmentioning

confidence: 99%

“…Consequently, the sensitivity current is higher in the filled cavity while the threshold voltage is lower. 11,12 This paper illustrates the conjugation of biomolecules, simulating a dielectric constant variation from 1 to 12 within the cavity region. This simulation closely mirrors the streptavidin−biotin binding system as evidenced by the experimental data.…”

Section: Introductionmentioning

confidence: 99%

“…When the cavity is empty, the capacitance between the gate and channel is low, leading to a reduced electric field at the tunneling junction compared to that when the cavity is filled. Consequently, the sensitivity current is higher in the filled cavity while the threshold voltage is lower. , This paper illustrates the conjugation of biomolecules, simulating a dielectric constant variation from 1 to 12 within the cavity region. This simulation closely mirrors the streptavidin–biotin binding system as evidenced by the experimental data .…”

Section: Introductionmentioning

confidence: 99%

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Assessment of the Biosensing Capabilities of SiGe Heterojunction Negative Capacitance-Vertical Tunnel Field-Effect Transistor

Singh,

Agnihotri,

Bagga

et al. 2024

ACS Appl. Bio Mater.

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In this study, a comparison of the negative capacitance vertical tunnel field-effect transistor (NC-VTFET) and VTFET for biosensing applications was conducted. Dielectrically modulated TFET demonstrates better sensitivity than the traditional metal oxide field effect transistor as a biosensor in label-free biosensing applications. The TFET biosensor, however, has much room for advancement by enhancing its DC characteristics. This research addresses the impact of ferroelectric gate oxide for integration of negative capacitance (NC) effect with the SiGe heterojunction pocket at the source–channel junction to enhance performance for biosensor applications. By putting the NC layer over SiO2, the channel voltage increases with decreased subthreshold slope and OFF current, thereby creating an NC effect. Because SiGe has a narrow band gap, pocket doping of SiGe near the source channel junction will increase the concentration of charge carriers, improving the band-to-band tunneling. In order to aid in the integration of biomolecules and to modulate band-to-band tunneling based on charge density (q f), dielectric constant (k), temperature, and cavity length, a cavity is additionally inserted above the source channel junction and underneath the NC layer, near to SiO2. These values were compared with and without the incorporation of NC layer with respect to various electrical properties such as drain current (I d), sensitivity, and electric field (E). According to the findings, labeled and label-free biosensors’ sensitivity may be increased by incorporating the NC effect into VTFET biosensors.

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Section: Resultsmentioning

confidence: 79%

Section: Resultsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

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Assessment of the Biosensing Capabilities of SiGe Heterojunction Negative Capacitance-Vertical Tunnel Field-Effect Transistor

Singh,

Agnihotri,

Bagga

et al. 2024

ACS Appl. Bio Mater.

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“…FETs were also recently utilized to diagnose the highly contagious COVID-19 illness due to the corona virus [4]. Various research groups [5], [6], [7], [8], [9], [10], [11], [12], [13], [14], [15], [16] have reported on the development of dielctrically modulated FET-based biosensors. Biosensors produced using FETs may be fabricated using either inorganic or organic semiconducting materials [17], [18].…”

Section: Introductionmentioning

confidence: 99%

Dielectric-Modulated Double Gate Bilayer Electrode Organic Thin Film Transistor-based Biosensor for Label-Free Detection: Simulation Study and Sensitivity Analysis

Jain¹,

Joshi²

2022

Preprint

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A dielectric-modulated double gate bilayer electrodes organic thin-film transistor (DMDGBE-OTFT) based sensor is proposed for label-free biomolecule detection. The double gate of DMDGBE-OTFT is used for creating two symmetrical gates underlap regions on both sides of the organic semiconductor. The parallel immobilization of biomolecule in two gates underlaps region changes the on-current (I ON ) of the DMDGBE-OTFT. Bilayer electrode is also used for significant reduction of barrier height to enhance the performance of the proposed device. The change in the drain current has been utilized to evaluate the sensitivity of the DMDGBE-OTFT for biomolecule recognition having different dielectric constants and corresponding charge densities using 2-D physics based numerical simulation when biomolecules are immobilized in the gate underlap area. The ATLAS TCAD tool is used to investigate the sensitivity performance of the DMDGBE-OTFT. The proposed DMDGBE-OTFT has 24.2% higher sensitivity in comparison to the recently reported OTFT-based biosensors for label-free detection of biomolecules. The DMDGBE-OTFT biosensor has a lot of potential for flexible biosensing applications in the future because of its flexibility , high sensitivity,biocompatibility and low cost.

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Catalytic Metal‐Gated Nano‐Sheet Field Effect Transistor and Nano‐Sheet Tunnel Field Effect Transistor Based Hydrogen Gas Sensor‐ A Design Perspective

Bansal,

Tiwari,

Majumdar

et al. 2024

Advcd Theory and Sims

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In this work, for the first time, the catalytic metal gate (CMG) based nanosheet Field Effect Transistor (NSFET) and nanosheet Tunnel Field Effect Transistor (NSTFET) are proposed for nano‐scale device dimensions, and the different design aspects of catalytic metal gate (CMG)‐based transduction for Hydrogen (H2) sensing are extensively investigated using numerical device simulation. The influence of applied biasing conditions and structural parameter specifications on the sensing performance of CMG‐NSFET and CMG‐NSTFET are methodically analyzed from device electrostatics and carrier transport mechanisms. Furthermore, the relative maximum sensitivity variations with H2‐partial pressure, ambient temperature, and the presence of ambient Oxygen are comprehensively studied. The study reveals that compared to CMG‐NSFET, the CMG‐NSTFET demonstrates a high immunity against bias and doping variations, with a notably higher (> 50%) sensitivity within low H2 partial pressures (10−15 – 10−10 Torr). Next, the sensing performance of CMG‐NSTFET is systematically optimized through a band‐gap and gate‐stack engineering approach, leading to a 180% to 650% sensitivity improvement from lower (10−15 Torr) to higher (10−5 Torr) range of H2 partial pressure. Finally, the performance of optimized CMG‐NSFET and CMG‐NSTFET are extensively benchmarked against other reported nanostructured CMG‐FET and TFET‐based H2 gas sensors, exhibiting a notably higher sensitivity in the proposed sensors.

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A Device Simulation-Based Investigation on Dielectrically Modulated Fringing Field-Effect Transistor for Biosensing Applications

Cited by 21 publications

References 27 publications

Assessment of the Biosensing Capabilities of SiGe Heterojunction Negative Capacitance-Vertical Tunnel Field-Effect Transistor

Assessment of the Biosensing Capabilities of SiGe Heterojunction Negative Capacitance-Vertical Tunnel Field-Effect Transistor

Dielectric-Modulated Double Gate Bilayer Electrode Organic Thin Film Transistor-based Biosensor for Label-Free Detection: Simulation Study and Sensitivity Analysis

Catalytic Metal‐Gated Nano‐Sheet Field Effect Transistor and Nano‐Sheet Tunnel Field Effect Transistor Based Hydrogen Gas Sensor‐ A Design Perspective

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