In this paper, we present a study on signal isolation approaches for mixed-signal circuits, via both simple test structures and actual circuits. Analysis was focused on commonly used substrates such as p+, p-and buried p+ substrate. Results show that the selection of substrate, isolation structures and layout rules have significant impact on the substrate noise isolation.

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We demonstrate, using a foundry-based 65nm bulk technology, mmWave CMOS VCOs in the range of 38GHz and 77GHz with highest reported continuous tuning range (14%-25%), competitive phase noise (-88dBc/Hz at 1MHz offset at 77GHz), and high P out (6dBm at 77GHz) needed to readily integrate with CMOS PA and to tolerate PVT variations. The DC power consumption of the 77GHz VCO is ~190mW and that of the 38GHz VCOs is ~60mW (~16mW without buffer) from 1V supply (V DD ). Device and design optimizations responsible for the high performance are presented. The impact of temperature and V DD variation (e.g., ~2.6GHz shift in frequency and >5.3dB variation in P out at 77GHz) is reported for the first time.

This letter reports power amplifiers for 77-GHz automotive radar applications in a 90-nm LP (low power) 1P6M CMOS technology. The three-stage single-ended PA has a 12.4 dB gain and a +9 1-dBm saturated output power and the two-stage differential PA has a 11.3 dB gain and a +11 4-dBm output power at in = 1 9 dBm. This is the first letter to report CMOS PA characteristics over full automotive temperature range ( 40 C to 125 C) at 77 GHz range.

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